In this study, a convenient chitosan oligosaccharide laser lithograph (COSLL) technology was developed to fabricate laser-induced graphene (LIG) electrodes and flexible on-chip microsupercapacitors (MSCs). With a simple one-step CO₂ laser, the pyrolysis of a chitosan oligosaccharide (COS) and in situ welding of the generated LIGs to engineering plastic substrates are achieved simultaneously. The resulting LIG products display a hierarchical porous architecture, excellent electrical conductivity (6.3 Ω sq^-1), and superhydrophilic properties, making them ideal electrode materials for MSCs. The pyrolysis-welding coupled mechanism is deeply discussed through cross-sectional analyses and finite element simulations. The MSCs prepared by COSLL exhibit considerable areal capacitance of over 4 mF cm^-2, which is comparable to that of the polyimide-LIG-based counterpart. COSLL is also compatible with complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical system (MEMS) processes, enabling the fabrication of LIG/Au MSCs with comparable areal capacitance and lower internal resistance. Furthermore, the as-prepared MSCs demonstrate excellent mechanical robustness, long-cycle capability, and ease of series-parallel integration, benefiting their practical application in various scenarios. With the use of eco-friendly biomass carbon source and convenient process flowchart, the COSLL emerges as an attractive method for the fabrication of flexible LIG on-chip MSCs and various other advanced LIG devices.

Flexible strain sensors play a crucial role in health monitoring, smart wearable devices, and human–machine interaction. Three-dimensional surface evaluation methods for strain sensors offer advantages by being closer to actual strain, featuring a larger working range, and being more suitable for multidirectional strain. In this study, a three-dimensional (3D) surface strain sensor based on polydimethylsiloxane/laser-induced graphene (PDMS/LIG) composite films has been developed. The electromechanical properties of this sensor, encompassing 3D strain range and sensitivity, can be adjusted by manipulating laser parameters and LIG patterns. The key to attaining these specific characteristics lies in the intentional design of crack types and orientations on the sensor's surface. Remarkably, the line-vertical (LV) sensor exhibits outstanding sensitivity with a GF of 211.3. The line-parallel (LP) sensor achieves a GF of 115.1. Additionally, it demonstrates a stretching range of 25% and maintains stable performance over an extensive number of strain/release test cycles (more than 3000 cycles). With these advantages, the 3D strain sensor can not only be applied in human activity monitoring but also monitoring pressure within microchannels in microfluidic chips, suggesting promising applications in the health and medical fields.

Short-wave ultraviolet (also called UVC) irradiation is a well-adopted method of viral inactivation due to its ability to damage genetic material. A fundamental problem with the UVC inactivation method is that its mechanism of action on viruses is still unknown at the molecular level. To address this problem, herein we investigate the response mechanism of genome materials to UVC light by means of quantum chemical calculations. The spectral properties of four nucleotides, namely, adenine, cytosine, guanine, and uracil, are mainly focused on. Meanwhile, the transition state and reaction rate constant of uracil molecules are also considered to demonstrate the difficulty level of adjacent nucleotide reaction without and with UVC irradiation. The results show that the peak wavelengths are 248.7 nm, 226.1 nm (252.7 nm), 248.3 nm, and 205.8 nm (249.2 nm) for adenine, cytosine, guanine, and uracil nucleotides, respectively. Besides, the reaction rate constants of uracil molecules are 6.419 × 10⁻⁴⁹ s⁻¹ M⁻¹ and 5.436 × 10¹¹ s⁻¹ M⁻¹ for the ground state and excited state, respectively. Their corresponding half-life values are 1.56 × 10⁴⁸ s and 1.84 × 10⁻¹² s. This directly suggests that the molecular reaction between nucleotides is a photochemical process and the reaction without UVC irradiation almost cannot occur.

Laser-induced graphene (LIG) has aroused a wide range of research interests ranging from micro-nano energy devices to the Internet of Things (IoT). Nevertheless, the non-degradability of most-used synthetic polymer carbon sources poses a serious threat to the environment. In this work, ecofriendly chitosan-based derivatives, including carboxymethyl chitosan (CMCS), chitosan oligosaccharide, and chitosan hydrochloride, are successfully converted into LIGs for the first time via a convenient one-step CO₂ laser engraving at ambient air. The obtained LIGs are characterized by a three-dimensional hierarchical porous structure and exhibit good sheet conductivity. The consecutive carbonization and graphitization mechanism of target precursors induced by laser heat accumulation is also deeply discussed. Besides, based on a mechanically reliable LIG/CMCS composite film and tribo-negative acrylic/polyimide anti-layers, two contact-separation mode triboelectric nanogenerators are built and their power densities range from 1.44 to 2.48 mW cm^-2. These devices with long cycle life can be used for low-frequency mechanical energy harvesting and commercial capacitance charging, which could be potentially applied in the wireless sensor network nodes. Such a family of chitosan derivatives paves a new route for LIG synthesis and provides new ideas for ecofriendly LIG electronics.

Flexible strain sensors based on nanomaterials have sparked a lot of interest in the field of wearable smart electronics. Laser induced graphene (LIG) based sensors in particular stand out due to their straightforward fabrication procedure, three-dimensional porous structures, and exceptional electromechanical capabilities. Recent studies have focused on LIG composites, however, it is still difficult to achieve great sensitivity and excellent linearity in a wide linear working range. Herein, a strain sensor with high sensitivity and good linearity is prepared in this work, which was realized by carbonizing the polyimide film coated with HfSe₂ to obtain three-dimensional porous graphene nanosheets decorated with HfSe₂ (HfSe₂/LIG). After being transferred to the flexible substrate of Ecoflex, it exhibits high stretchability, hydrophobicity and robustness, and obtains excellent electromechanical properties. The HfSe₂/LIG strain sensor demonstrated high sensitivity (gauge factor, GF ≈ 46), a low detection limit (0.02%), good linearity (R² = 0.99) in a large working range (up to 30%), and a quick response time (0.20 s). Additionally, it exhibits good stability and consistent behavior across a large number of strain/release test cycles (>3000 cycles). With these benefits, the sensor can be used to monitor various limb movements (including finger, wrist and neck movements) and minute artery activity, and can generate reliable signals. Therefore, the HfSe₂/LIG-based sensor has enormous potential for use in wearable intelligent electronics and movement monitoring.

The fabrication of flexible pressure sensors with low cost, high scalability, and easy fabrication is an essential driving force in developing flexible electronics, especially for high-performance sensors that require precise surface microstructures. However, optimizing complex fabrication processes and expensive microfabrication methods remains a significant challenge. In this study, we introduce a laser pyrolysis direct writing technology that enables rapid and efficient fabrication of high-performance flexible pressure sensors with a micro-truncated pyramid array. The pressure sensor demonstrates exceptional sensitivities, with the values of 3132.0, 322.5, and 27.8 kPa^-1 in the pressure ranges of 0-0.5, 0.5-3.5, and 3.5-10 kPa, respectively. Furthermore, the sensor exhibits rapid response times (loading: 22 ms, unloading: 18 ms) and exceptional reliability, enduring over 3000 pressure loading and unloading cycles. Moreover, the pressure sensor can be easily integrated into a sensor array for spatial pressure distribution detection. The laser pyrolysis direct writing technology introduced in this study presents a highly efficient and promising approach to designing and fabricating high-performance flexible pressure sensors utilizing micro-structured polymer substrates.

In recent years, metal crack-based stretchable flexible strain sensors have attracted significant attention in wearable device applications due to their extremely high sensitivity. However, the tradeoff between sensitivity and detection range has been an intractable dilemma, severely limiting their practical applications. Herein, we propose a laser transmission pyrolysis (LTP) technology for fabricating high-performance flexible strain sensors based on (Au) metal cracks with the microchannel array on the polydimethylsiloxane (PDMS) surface. The fabricated flexible strain sensors exhibit high sensitivity [gauge factor (GF) of 2448], wide detection range (59% for tensile strain), precise strain resolution (0.1%), fast response and recovery times (69 and 141 ms), and robust durability (over 3000 cycles). In addition, experiment and simulation results reveal that introducing a microchannel array enables the stress redistribution strategy on the sensor surface, which significantly improves the sensing sensitivity compared to conventional flat surface sensors. Based on the excellent performance, the sensors are applied to detect subtle physiological signals, such as pulse and swallowing, as well as to monitor large-scale motion signals, such as knee flexion and finger bending, demonstrating their potential applications in health monitoring, human-machine interactions, and electronic skin.

The development of high-performance gas sensing materials is one of the development trends of new gas sensor technology. In this work, in order to predict the gas-sensitive characteristics of HfSe₂ and its potential as a gas-sensitive material, the interactions of nonmetallic element (O, S, Te) doped HfSe₂ monolayer and small molecules (NH₃ and O₃) have been studied by first-principles based on density functional theory. The results show that the adsorption of NH₃ and O₃ on pristine HfSe₂ monolayer is weak, and the adsorption strength can be significantly improved by doping O. And O-HfSe₂ is chemical adsorption to O₃ with large adsorption energy and transfer charge, and the band gap of O[sbnd]HfSe₂ disappears after adsorbing O₃, indicating that the adsorption of O₃ has a significant effect on the electrical properties of the substrate. These mean that O₃ is difficult to recover from the substrate surface, thus preventing O-HfSe₂ from developing into a sensitive material for O₃ detection. After doping S, the charge transfers and adsorption strength to NH₃ are the largest, but it is still small. So, the strain effect on the S-HfSe₂/NH₃ adsorption system is also studied. The results indicate that the adsorption strength of S-HfSe₂ to NH₃ can be enhanced by stretching S-HfSe₂ along x-axis. After absorbing NH₃, the conductivity of x-axis strained S-HfSe₂ changes, which suggest its sensitivity. And the predicted recovery times of S-HfSe₂ surfaces with ε_x=4%, 6% and 8% are 0.027 s, 1.153 s and 102.467 s, respectively, which suggests that the S-HfSe₂ monolayer has the potential to be developed as a sensitive material for NH₃ detection. These adsorption mechanism studies can also serve as a theoretical foundation for the experimental design of gas-sensing materials.

For the relevant properties of pristine and doped (Si, P, Se, Te, As) monolayer WS₂ before and after the adsorption of CO, CO₂, N₂, NO, NO₂ and O₂, density functional theory (DFT) calculations are made. Calculation results reveal that the monolayer WS₂ doped with P and As atoms can be substrate materials for NO and NO₂ gas sensors. However, after the subsequent CDD and ELF calculations, it is found that P-doped monolayer WS₂ adsorbs NO and NO₂ in a chemical way, while As-doped monolayer WS₂ adsorbs NO and NO₂ in a physical way. Also, the charge transfer between As-doped monolayer WS₂ and NO is relatively small and not easily detected. Besides, As-doped monolayer WS₂ system exhibits greater differences in optical properties (the imaginary part of reflectivity and dielectric function) before and after the adsorption of NO₂ gas than before and after adsorption of NO gas. These differences in optical properties assist sensor devices in making gas adsorption-related judgments. Through the analysis of the recovery time, DOS and PDOS, As-doped monolayer WS₂ is also verified to be a promising NO₂ sensing material, whose recovery time is calculated to be as short as 0.169 ms at 300 K.

In this work, the adsorption of toxic gaseous NO₂ and other gas molecules (NO, CO, CO₂, N₂, O₂, SO₂) on pristine and X-doped (X = Si, P, S, Te, As) two-dimensional (2D) WSe₂ have been detailed studied by performing density functional theory (DFT) calculations. Calculation results of adsorption energies and adsorption distances demonstrate that As-doped 2D WSe₂ (As-WSe₂) exhibits high selectivity not only towards NO₂, but also towards NO and SO₂. However, the charge transfer between NO and the substrate is too small to detect, and chemical bond forms between SO₂ and the substrate; both phenomena make As-WSe₂ substrate more suitable as a substrate material of the NO₂ sensor. To eliminate the interference of SO₂ on the adsorption of NO₂, coexistence of NO₂ and SO₂ is simulated. Results reveal that although the interaction between SO₂ and the As-WSe₂ substrate is stronger than that between NO₂ and the substrate, SO₂ molecule hardly interacts with the substrate when co-adsorbed with NO₂. Besides, calculation results of DOS and PDOS further confirm the sensitivity of As-WSe₂ towards NO₂; and those of the recovery time also highlight the extremely fast recovery rate of As-WSe₂ after adsorbing NO₂. The present findings make As-WSe₂ monolayer a potential substrate material of NO₂ gas sensors used in the atmospheric environment.

In this paper, tin oxidation (SnO x )/tin-sulfide (SnS) heterostructures are synthesized by the post-oxidation of liquid-phase exfoliated SnS nanosheets in air. We comparatively analyzed the NO2 gas response of samples with different oxidation levels to study the gas sensing mechanisms. The results show that the samples oxidized at 325 °C are the most sensitive to NO2 gas molecules, followed by the samples oxidated at 350 °C, 400 °C and 450 °C. The repeatabilities of 350 °C samples are better than that of 325 °C, and there is almost no shift in the baseline. Thus this work systematically analyzed the gas sensing performance of SnO x/SnS-based sensor oxidized at 350 °C. It exhibits a high response of 171% towards 1 ppb NO2, a wide detecting range (from 1 ppb to 1 ppm), and an ultra-low theoretical detection limit of 5 ppt, and excellent repeatability at room temperature. The sensor also shows superior gas selectivity to NO2 in comparison to several other gas molecules, such as NO, H2, SO2, CO, NH3, and H2O. After X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscope, and electron paramagnetic resonance characterizations combining first principle analysis, it is found that the outstanding NO2 sensing behavior may be attributed to three factors: The Schottky contact between electrodes and SnO x/SnS; active charge transfer in the surface and the interface layer of SnO x/SnS heterostructures; and numerous oxygen vacancies generated during the post-oxidation process, which provides more adsorption sites and superior bandgap modulation. Such a heterostructure-based room-temperature sensor can be fabricated in miniaturized size with low cost, making it possible for large-scale applications.

Sensitivity and selectivity are important factors for Tl₂O monolayer to be the sensitive material. In this work, the sensing performance of NO₂ on pure and X-Tl₂O (X = In, Cd, Y, Pb, Ga, Si) sheets has been detailed investigated by means of DFT. The results show that the doped systems have a better sensing performance for NO₂ and it is most evident in the In-Tl₂O substrate. And In-Tl₂O has a unique response to NO₂ with appropriate adsorption energy (−1.79 eV) and charge transfer (−0.51 e) which are far more than B-C₃N (−1.15 eV, 0.44 e). Besides, although In-Tl₂O monolayer and SO₂ have formed the chemical bond, the adsorption effect of NO₂ on the substrate hardly changes when the co-adsorption of SO₂ and NO₂ occurs on it. In addition, the reflectivity and optical absorption of the gas/In-Tl₂O (gas = NO, NO₂ and SO₂) adsorption system are calculated, and the results indicate optical absorption and reflectivity of NO₂/In-Tl₂O system are all far greater than that of other systems in the visible and near infrared regions. So it is easy to be distinguished by infrared detection. These all show that the In-Tl₂O is an excellent sensing material for NO₂ detection.

In this study, the structural, electronic and optical properties of a tungsten disulfide (WS₂) hybrid with indium-gallium-zinc-oxide (IGZO) heterostructures were investigated based on density functional theory (DFT) calculations. According to the results of binding energy, charge density difference and electron localization function of heterostructures, we found that the WS₂ and IGZO monolayers were bound to each other via non-covalent interactions with large binding energy. The calculated results illustrate that the AAii stacking pattern has an indirect band gap of 1.643 eV, while AAi and AB stacking patterns have maximum direct-gaps of 1.102 eV and 1.234 eV, respectively. Under an external E-field and mechanical strain, the response of the energy gap of the WS₂/IGZO heterostructure monotonically decreased over a wide range, even with a semiconductor-metal transition. In addition, we investigated the optical properties of the heterostructure and found that it exhibits a much broad spectral responsivity (from visible light to deep UV light) and a more pronounced optical absorption than WS₂ and IGZO monolayers. Moreover, the tensile strain could weaken the photoresponse of the heterostructure to the UV light and enhance the response for the visible light; under compressive strain, the heterostructure showed a strong absorption peak in the UV light. Meanwhile, a red-shift was observed under an external strain. All these unique and tunable properties indicate that the WS₂/IGZO heterostructure is a good candidate for nanoelectronic and photoelectronic devices, such as field-effect transistors, flexible sensors, photodetectors and photonic devices.

Sensitive materials for formaldehyde (HCHO) sensor need high sensitivity and selectivity. The research on two dimensional (2D) sensitive material is growing, and most studies focus on the pristine or modified graphene. So it is essential to introduce other 2D materials into HCHO gas sensor. In this report, the adsorption behaviors of organic gas molecules including C₂H₆, C₂H₄, C₂H₂, C₆H₆, C₂H₅OH and HCHO over indium triphosphide (InP₃) monolayer were studied by using first-principle atomistic simulations. The calculation results demonstrate that InP₃ monolayer has a high sensitivity and selectivity to HCHO than others. By comparing the structures and adsorption results of InP₃ monolayer, graphene and single-layered MoS₂, it was found that the polarity bonds and steric effect of the site on monolayer play an important role in the detection of HCHO. The effect of strain on the gas/substrate adsorption systems was also studied, implying that the stained InP₃ monolayer could enhance the sensitivity and selectivity to HCHO. This study provides useful insights into the gas-surface interaction that may assist future experimental development of 2D material for HCHO sensing and performance optimization based on strain.