Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably1. However, the requirements of having a large qubit count and operating with high fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise2,3 but demonstrations so far use between one and four qubits and typically optimize the fidelity of either single- or two-qubit operations, or initialization and readout4-11. Here, we increase the number of qubits and simultaneously achieve respectable fidelities for universal operation, state preparation and measurement. We design, fabricate and operate a six-qubit processor with a focus on careful Hamiltonian engineering, on a high level of abstraction to program the quantum circuits, and on efficient background calibration, all of which are essential to achieve high fidelities on this extended system. State preparation combines initialization by measurement and real-time feedback with quantum-non-demolition measurements. These advances will enable testing of increasingly meaningful quantum protocols and constitute a major stepping stone towards large-scale quantum computers.

Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuclear spin, thereby serving as excellent hosts for spins with long quantum coherence. Here, we demonstrate quantum dot arrays in a silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe), and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make an Ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N + 1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive crosstalk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. We put these results into perspective for quantum technology and identify industrial qubits, hybrid technology, automated tuning, and two-dimensional qubit arrays as four key trajectories that, when combined, enable fault-tolerant quantum computation.

We experimentally investigate the performance of NbTiN superconducting nanowire single photon detectors above the base temperature of a conventional Gifford-McMahon cryocooler (2.5 K). By tailoring design and thickness (8 - 13 nm) of the detectors, high performance, high operating temperature, single-photon detection from the visible to telecom wavelengths are demonstrated. At 4.3 K, a detection efficiency of 82 % at 785 nm wavelength and a timing jitter of 30 ± 0.3 ps are achieved. In addition, for 1550 nm and similar operating temperature we measured a detection efficiency as high as 64 %. Finally, we show that at temperatures up to 7 K, unity internal efficiency is maintained for the visible spectrum. Our work is particularly important to allow for the large scale implementation of superconducting single photon detectors in combination with heat sources such as free-space optical windows, cryogenic electronics, microwave sources and active optical components for complex quantum optical experiments and bio-imaging.

Silicon spin qubits are one of the leading platforms for quantum computation^1,2. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. Since the signal from a single electron spin is minute, the different spin states are converted to different charge states^3,4. Charge detection, so far, has mostly relied on external electrometers^5–7, which hinders scaling to two-dimensional spin qubit arrays^2,8,9. Alternatively, gate-based dispersive read-out based on off-chip lumped element resonators has been demonstrated^10–13, but integration times of 0.2–2 ms were required to achieve single-shot read-out^14–16. Here, we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio of about six within an integration time of only 1 μs. Using Pauli’s exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of >98% in 6 μs. This result may form the basis of frequency-multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture.

In the version of this Letter originally published, the second, third and fourth exponential terms in equation (3) were incorrect; the corrected equation is shown below. (Formula presented.). The correct equation was used for data analysis. The online versions have been amended.

We demonstrate the strong coupling between a single electron spin in silicon and a single photon in a superconducting microwave cavity. Using the same cavity we perform rapid high-fidelity single-shot readout of two-electron spin states.

The requirements in quantum optics experiments for high single-photon detection efficiency, low timing jitter, low dark count rate and short dead time have been fulfilled with the development of superconducting nanowire single-photon detectors. Although they offer a detection efficiency above 90%, achieving a high time resolution in devices made of amorphous materials is a challenge, particularly at temperatures above 0.8 K. Devices made from niobium nitride and niobium titanium nitride allow us to reach the best timing jitter but, in turn, have stronger requirements in terms of film quality to achieve a high efficiency. Here we take advantage of the flexibility of reactive co-sputter deposition to tailor the composition of Nb_xTi_1-xN superconducting films and show that a Nb fraction of x = 0.62 allows for the fabrication of detectors from films as thick as 9 nm and covering an active area of 20 µm, with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm. This is a signature of an internal detection efficiency saturation, achieved while maintaining the high time resolution associated with NbTiN and operation at 2.5K. With our optimized recipe, we reliably fabricated detectors with high critical current densities reaching a saturation plateau at 1550 nm with 80% system detection efficiency and with a FWHM timing jitter as low as 19.5 ps.

Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. Our results provide a route to realizing large networks of quantum dot–based spin qubit registers.

Quantum computing holds the promise of exponential speedup compared to classical computing for select algorithms and applications. Relatively small numbers of logical quantum bits or qubits could outperform the largest of supercomputers. Quantum dots in Si-based heterostructures and superconducting Josephson junctions are just two of the many approaches to construct the qubit. These, in particular, bear similarities to the transistors and interconnects used in advanced semiconductor manufacturing. While initial results on few-qubit systems are promising, advanced process control is expected to improve the qubit uniformity, coherence time, and gate fidelity needed for larger systems. This can be realized through the systematic characterization of film growth, interface control, and patterning.

Helium ion beam lithography (HIL) has been demonstrated as a promising alternative to electron beam lithography (EBL) for R&D purposes, offering high-resolution lithography at high pattern densities. This chapter reviews focused He ion beam lithography, providing a detailed discussion on the ion beam-resist interaction mechanisms and latest experimental results in this field. In addition, impact of ion shot noise is examined, a comparison to He-ion beam milling is made, and future directions are mentioned.