S. Du
Please Note
11 records found
1
AS-ASR
A Lightweight and Real-Time Aphasia-Specific Auto Speech Recognition System
An Alternative ADC for MPPT Applications in a PV-PMIC System
A current sampling low power ADC with Non-Linearity Canceling Time-to-Digital Converter
...
Increasing the length of the heat path and/or moving to a more advanced technology node will enhance measurement accuracy. However, since silicon is an excellent heat conductor, the output of such sensors is at the millivolt level, which makes the design of accurate readout circuitry quite challenging.
In this work, an accurate readout circuit was designed for TD-based sensors realized in a 65nm process. It consists of a low-noise pre-amplifier, followed by a Sigma-Delta ADC. Based on simulation results, the designed circuit achieves a 23 mK (3σ) inaccuracy at 27◦C, which is negligible compared to the expected inaccuracy of the TD-based sensors. ...
Increasing the length of the heat path and/or moving to a more advanced technology node will enhance measurement accuracy. However, since silicon is an excellent heat conductor, the output of such sensors is at the millivolt level, which makes the design of accurate readout circuitry quite challenging.
In this work, an accurate readout circuit was designed for TD-based sensors realized in a 65nm process. It consists of a low-noise pre-amplifier, followed by a Sigma-Delta ADC. Based on simulation results, the designed circuit achieves a 23 mK (3σ) inaccuracy at 27◦C, which is negligible compared to the expected inaccuracy of the TD-based sensors.
NMSE of -44.61 dB. Since the TCN-DPD architecture was completed, this proposed model’s performance in PA and DPD benchmarks is desirable to be tested, and later experiments will use the same dataset and framework as the benchmark of activation function did. In PA benchmarking, the TCN model achieves SIM-NMSE -34.99 dB on average compared to other models, LSTM, GRU, RVTDCNN, VDLSTM, PNTDNN, and DGRU. This achievement shows the TCN architecture has a high potential to handle a range of dependencies efficiently in the DPD application system. Furthermore, DPD benchmarking is the main experiment in this thesis. Two architectures were selected as the pre-trained PA model: the DGRU and TCN models. When the pre-trained PA is fixed as the DGRU model, TCN-DPD demonstrates superior linearization performance with only 500 real-valued parameters, achieving averaged and simulated ACPRs of -51.58/-49.26 dBc (L/R), EVM of -47.52 dB, and NMSE of -44.61dB. The results are simulated ACPRs of -50.39/-50.01 dBc (L/R), EVM of -47.88 dB, and NMSE of -45.51 dB in average when the pre-trained PA model is TCN. Both DPD benchmarks include different DNN-DPD models, and TCN-DPD has superior performance in the comparison, especially the SIM-NMSE and SIM-EVM performance is significantly higher than other models when the pre-trained model is TCN. These results establish TCN-DPD as a promising solution for efficient wideband PA linearization. Moreover, the evaluation extended to DNN-DPD performance with various numbers of parameters ranging from 200 to 1000, where the TCN-200 model highlighted its effectiveness by showing impressive results in SIM-NMSE -41.27dB/-43.51dB(DGRU/TCN PA), achieving superior linearization performance while using significantly fewer parameters than existing deep neural network solutions, proving the TCN-DPD model’s parameters efficiency.
The research in this thesis conclusively demonstrates that TCNs can be implemented in DPD applications, providing more parameters efficiency, better performance, and robust PA linearization solutions, potentially setting a new alternative in DPD technology. ...
NMSE of -44.61 dB. Since the TCN-DPD architecture was completed, this proposed model’s performance in PA and DPD benchmarks is desirable to be tested, and later experiments will use the same dataset and framework as the benchmark of activation function did. In PA benchmarking, the TCN model achieves SIM-NMSE -34.99 dB on average compared to other models, LSTM, GRU, RVTDCNN, VDLSTM, PNTDNN, and DGRU. This achievement shows the TCN architecture has a high potential to handle a range of dependencies efficiently in the DPD application system. Furthermore, DPD benchmarking is the main experiment in this thesis. Two architectures were selected as the pre-trained PA model: the DGRU and TCN models. When the pre-trained PA is fixed as the DGRU model, TCN-DPD demonstrates superior linearization performance with only 500 real-valued parameters, achieving averaged and simulated ACPRs of -51.58/-49.26 dBc (L/R), EVM of -47.52 dB, and NMSE of -44.61dB. The results are simulated ACPRs of -50.39/-50.01 dBc (L/R), EVM of -47.88 dB, and NMSE of -45.51 dB in average when the pre-trained PA model is TCN. Both DPD benchmarks include different DNN-DPD models, and TCN-DPD has superior performance in the comparison, especially the SIM-NMSE and SIM-EVM performance is significantly higher than other models when the pre-trained model is TCN. These results establish TCN-DPD as a promising solution for efficient wideband PA linearization. Moreover, the evaluation extended to DNN-DPD performance with various numbers of parameters ranging from 200 to 1000, where the TCN-200 model highlighted its effectiveness by showing impressive results in SIM-NMSE -41.27dB/-43.51dB(DGRU/TCN PA), achieving superior linearization performance while using significantly fewer parameters than existing deep neural network solutions, proving the TCN-DPD model’s parameters efficiency.
The research in this thesis conclusively demonstrates that TCNs can be implemented in DPD applications, providing more parameters efficiency, better performance, and robust PA linearization solutions, potentially setting a new alternative in DPD technology.
A Maximum Power Point Tracking (MPPT) strategy is employed to find the optimal matching between the harvesting sensor, which in this case is a solar cell, and the input of the converter. The Maximum Power Point (MPP) is found by measuring the output current of the converter, decreasing the duty cycle of the switching power MOSFETs, and again measuring the output current to check if it increases. This process is repeated until the output current no longer increases, which is where the MPP will be. The duty-cycle pulses that control the power switches are generated by comparing a reference voltage representing the duty cycle with two sawtooth waves with a phase difference of 180 degrees generated on-chip.
Usually, for converters that handle large currents, large power switches are required to keep the on-resistance of the switches minimal such that the conduction losses do not dominate. Since the converter also needs to be able to efficiently convert smaller powers, the size of the power switches is made configurable. This is necessary since otherwise the gate-charge losses will become dominant. The total size of the segmented power switches are controlled digitally by a logic unit that calculates the expected input current using 2-bit representations of the measured output current and the two most significant bits of the 5-bit representation for the duty cycle set by the MPPT.
Schematic simulation results show a conversion efficiency of up to 92%. The proposed system is designed and simulated using 180 nm TSMC CMOS technology. The chip covers a total silicon area of 2.20 mm2, with an active area of 1.12 mm2. ...
A Maximum Power Point Tracking (MPPT) strategy is employed to find the optimal matching between the harvesting sensor, which in this case is a solar cell, and the input of the converter. The Maximum Power Point (MPP) is found by measuring the output current of the converter, decreasing the duty cycle of the switching power MOSFETs, and again measuring the output current to check if it increases. This process is repeated until the output current no longer increases, which is where the MPP will be. The duty-cycle pulses that control the power switches are generated by comparing a reference voltage representing the duty cycle with two sawtooth waves with a phase difference of 180 degrees generated on-chip.
Usually, for converters that handle large currents, large power switches are required to keep the on-resistance of the switches minimal such that the conduction losses do not dominate. Since the converter also needs to be able to efficiently convert smaller powers, the size of the power switches is made configurable. This is necessary since otherwise the gate-charge losses will become dominant. The total size of the segmented power switches are controlled digitally by a logic unit that calculates the expected input current using 2-bit representations of the measured output current and the two most significant bits of the 5-bit representation for the duty cycle set by the MPPT.
Schematic simulation results show a conversion efficiency of up to 92%. The proposed system is designed and simulated using 180 nm TSMC CMOS technology. The chip covers a total silicon area of 2.20 mm2, with an active area of 1.12 mm2.
This thesis describes the readout ADC design for the next-generation I-ToF imagers used for smartphone face recognition in collaboration with Infineon. A compact 11-bit 2 MS/s column-level ADC is developed in 65nm CMOS image technology. To balance between the available area and required speed, a hybrid SAR-RAMP ADC concept is proposed, which also embeds a threshold comparison phase to relax requirements on successive phases. The ADC has been verified with the post-layout extracted view of the column-level analog circuits and the schematic view of the central/digital circuits with an ideal ramp buffer, achieving a 1.1 V - 3.3 V input range with a 1.1 V reference, a signal-to-noise and distortion ratio (SNDR) of 64.3 dB, 45 µW power consumption, a Walden figure of merit (FOM$_W$) of 107 fJ/conv-step and an area of 7 µm $\times$ 815 µm. ...
This thesis describes the readout ADC design for the next-generation I-ToF imagers used for smartphone face recognition in collaboration with Infineon. A compact 11-bit 2 MS/s column-level ADC is developed in 65nm CMOS image technology. To balance between the available area and required speed, a hybrid SAR-RAMP ADC concept is proposed, which also embeds a threshold comparison phase to relax requirements on successive phases. The ADC has been verified with the post-layout extracted view of the column-level analog circuits and the schematic view of the central/digital circuits with an ideal ramp buffer, achieving a 1.1 V - 3.3 V input range with a 1.1 V reference, a signal-to-noise and distortion ratio (SNDR) of 64.3 dB, 45 µW power consumption, a Walden figure of merit (FOM$_W$) of 107 fJ/conv-step and an area of 7 µm $\times$ 815 µm.
This work proposes an energy harvesting platform that is
able to convert power from both DC sources (photo-voltaic cells and TEGs) as
well as piezo element sources. It does so only using a single input channel to
which a single harvester can be connected. The proposed system is able to
differentiate between the two source types and adjust the power converter
configuration accordingly.For the DC sources, a novel switched-capacitor power
converter (SCPC) is proposed, that is able to convert the energy from a
harvester that has a maximum power point (MPP) output voltage of 170mV to 5V
and a maximum power point output power of 10uW to 50mW. This DC-DC converter
offers 119 different positive voltage conversion ratios, with a maximum voltage
conversion ratio of 16, using four in-package capacitors. As a result of this
high number of conversion ratios, the MPP output voltage of the harvester and
the input voltage of the power converter are matched accurately, causing the
harvesting efficiency to be very high. A maximum harvesting efficiency of 96.2%
is found in simulations. For the piezo element sources, the concept of a
flipping-capacitor rectifier (FCR) has been adjusted to work in harmony with
the designed SCPC. In a steady-state condition, the capacitors of the SCPC
reach specific voltages, such that they can create evenly spaced voltage steps
for the flipping operation. With this technique, a voltage flipping efficiency
of 0.9375 and a theoretical maximum output power improvement rate (MOPIR) of 32
can be reached. Due to losses in the system, simulation results show a MOPIR of
up to 20.0, which is still significantly higher than the state-of-art. The
system is designed to work with harvesters with a piezo capacitance of up to
100nF, an excitation frequency of 1Hz to 200Hz and an equivalent FBR maximum
power point output power of 1uW to 50mW. An implementation of the proposed
system is discussed and simulated. The total active silicon area for the
designed system is 2.12mm2 in a 0.18 um TSMC technology.
...
This work proposes an energy harvesting platform that is able to convert power from both DC sources (photo-voltaic cells and TEGs) as well as piezo element sources. It does so only using a single input channel to which a single harvester can be connected. The proposed system is able to differentiate between the two source types and adjust the power converter configuration accordingly.For the DC sources, a novel switched-capacitor power converter (SCPC) is proposed, that is able to convert the energy from a harvester that has a maximum power point (MPP) output voltage of 170mV to 5V and a maximum power point output power of 10uW to 50mW. This DC-DC converter offers 119 different positive voltage conversion ratios, with a maximum voltage conversion ratio of 16, using four in-package capacitors. As a result of this high number of conversion ratios, the MPP output voltage of the harvester and the input voltage of the power converter are matched accurately, causing the harvesting efficiency to be very high. A maximum harvesting efficiency of 96.2% is found in simulations. For the piezo element sources, the concept of a flipping-capacitor rectifier (FCR) has been adjusted to work in harmony with the designed SCPC. In a steady-state condition, the capacitors of the SCPC reach specific voltages, such that they can create evenly spaced voltage steps for the flipping operation. With this technique, a voltage flipping efficiency of 0.9375 and a theoretical maximum output power improvement rate (MOPIR) of 32 can be reached. Due to losses in the system, simulation results show a MOPIR of up to 20.0, which is still significantly higher than the state-of-art. The system is designed to work with harvesters with a piezo capacitance of up to 100nF, an excitation frequency of 1Hz to 200Hz and an equivalent FBR maximum power point output power of 1uW to 50mW. An implementation of the proposed system is discussed and simulated. The total active silicon area for the designed system is 2.12mm2 in a 0.18 um TSMC technology.