YAG: Ce3+ phosphor/silicone composites are widely used in solid-state lighting as a light converter to achieve white lighting. However, because of high thermal resistance and low thermal stability, the luminous performance of YAG: Ce3+ phosphor/silicone composite deteriorates rapidly when excited by high-power-density blue-laser. To explore the potential of blue laser-excited YAG: Ce3+ phosphor/silicone composites, the luminous performances under different blue laser power conditions were characterized by both the reflective and transmissive excitations using a self-built three-integrating-sphere system. Furthermore, the Monte-Carlo Ray-tracing simulation was used to illustrate the light-transmission and energy conversion mechanism in the phosphor/silicone composites. The results showed that: (1) The YAG: Ce3+ phosphor/silicone composite could be excited by the 0.292W laser light with the peak wavelength of 445nm, excessive laser power will cause phosphor thermal quenching and silicone carbonization. (2) The luminous flux of the composite under both the reflective and transmissive excitations gradually increased with the increase of phosphor concentration; correspondingly, the color coordinate moved to the yellow region, and the Correlated Color Temperature (CCT) gradually decreased. (3) The simulation results indicated that under the same phosphor concentration, the luminous flux obtained by reflection excitation was largely higher than that by the transmission excitation, as the light re-conversion and strong back-scattering were occurred in the reflective and transmissive laser excitation respectively.@en

In a light-emitting diode (LED) package, silicone encapsulant serves as a chip protector and enables the light to transmit, since it exhibits the advantages of high light transmittance, high refractive index, and high thermal stability. However, its reliability is still challenged under harsh operation conditions. In this study, the optical and mechanical properties of silicone encapsulant, including appearance, light transmittance, Young’s modulus, and tensile strength, were experimentally monitored during the sulfur-rich ageing process. Meanwhile, the Fourier transform infrared (FTIR) spectroscopy and molecular dynamics (MD) simulation were used to reveal its degradation mechanism. The results show that 1) in the sulfur (S8)-rich ageing process, the severe vulcanization reaction occurred in silicone encapsulant assisted only by high temperature and high moisture, with the existence of H2S as the reaction product of S8 and H2O vapor. 2) Vulcanization characterized by the formation of the sulfhydryl (-SH) group lowered both optical and mechanical properties of silicone encapsulant. 3) The hydrolysis reaction featured by the formation of the hydroxyl (-OH) group decreased the mechanical performances of silicone encapsulant but brought slight harm to its optical performances.@en

As a core packaging material of light color conversion, phosphor/silicone composite plays an indispensable role in light emitting diode (LED) packaging. At present, commercial LED packages mainly use blue LED chips to stimulate Yttrium Aluminum Garnet (YAG) yellow phosphor to reach a white color. However, (Ca,Sr)AlSiN 3 :Eu 2+ (CSASN) red phosphor is often added to improve the color-rendering performance given the absence of red light emission spectrum. However, inevitably harsh working conditions can induce the degradation of CSASN red phosphor, which will directly influence the mechanical properties of its silicone composites and challenge the reliability of its LED packaging. In this study, the coupling effects of temperature–humidity–sulfur on the mechanical degradation of CSASN phosphor/silicone composites were considered. The prepared CSASN phosphor/silicone test samples were first aged under high-temperature, high-humidity, and high-sulfur conditions. A series of dynamic mechanical analysis tests were then conducted to qualitatively evaluate their mechanical properties. Finally, the dynamic tension process and interfacial cracking of CSASN phosphor/silicone composites were simulated by using finite element analysis with cohesive modeling. The results showed that: (1) under coupled aging conditions, the mechanical properties of the phosphor/silicone composite decreased due to the reaction of phosphor with sulfur, water, and oxygen; (2) crack initiation and propagation were most likely to occur at the edge of the crack perpendicular to the tensile direction. The debonding of particles with silicone rather than the fracture of phosphors was one of the main aspects resulting in failure mechanisms; (3) the highly concentrated and localized phosphor in the silicone matrix and the irregular shape and arrangement of phosphor particles generated cracks in the phosphor/silicone composite.@en

Rare earth elements (REEs) are vital to the development of low-carbon technologies. There are rising concerns in the United States and elsewhere about REE supply chain stability and risks given the unvalidated perception in the heavy reliance of China, by far the largest REE supplier. However, the relationship between key countries at different stages of global REE supply chains remains unclear. Here, we use a dynamic flow analysis to explore supply dependence between the United States and China by tracing REE flows from mineral mining to market between 2000 and 2022. Our results indicate complementary and cooperative US–China interactions, especially after 2018 when the United States became a net exporter of REE and China's largest supplier, and China became the largest importer of the US REEs and manufacturer of REE-enabled low-carbon technologies. This intensifying interdependence stabilizes REE supply chains and highlights the importance of cooperative REE trade networks.@en

Power modules applied in offshore applications are facing risks of corrosion failures on die-attach materials due to high humidity and H2S exposure. To investigate such corrosion behavior for sintered die-attach materials, we conducted a study with four groups of samples fabricated using copper and silver metal particles under different solvent systems. Such samples were firstly subjected to high-humidity-H2S conditions for 168 h to simulate the harsh offshore environment. After undergoing corrosion, the primary compounds formed were CuO/Cu2O and Ag2S through SEM, XRD, and XPS analysis. Notably, the incorporation of epoxy resin into sintered copper joints resulted in a remarkable reduction in corrosion and a substantial improvement in electrical conductivity after the reaction. In contrast, while the addition of epoxy did not evidently reduce corrosion in silver joints, it did lead to a significant increase in shear strength. Furthermore, to gain further insights into the effect of epoxy resin on corrosion behavior, electrochemical analysis, and molecular dynamics simulations were conducted. Finally, the mechanical reliability of the corroded copper and silver joints was evaluated through thermal shock tests. In summary, sintered copper joints exhibited better anti-corrosion behaviors than sintered silver under high humidity and H2S exposure, especially with the addition of epoxy resin. However, the corrosion products of sintered copper suffered from a sharp decrease in shear strength after thermal shock tests than sintered silver, which is probably due to the coefficient of thermal expansion mismatch.@en

Double-sided packages for heat dissipation are an efficient thermal management mechanism for power semiconductor devices. A fan-out panel-level packaging (FOPLP), as one of the double-sided forms, exhibits excellent electro–thermal characteristics and provides low stray inductance and thermal resistance. Besides, the temperature at each point within the structure is closely related to its thermo–mechanical properties and device reliability. However, thermal resistance is limited in describing the temperature distribution. Finite element analysis (FEA) requires time-consuming construction of 3D models. Therefore, to depict the temperature distribution of FOPLP rapidly and accurately, a numerical heat transfer model was proposed for the double-sided package structure. The solution was obtained from the steady-state thermal balance Laplace equation using the separation of variables method. Several boundaries were analyzed to determine the specific parameters in the model. Finally, the temperature field predicted by the derived numerical model was compared with finite element simulation results. The proposed model was consistent with both Silicon (Si) and Silicon Carbide (SiC) FOPLP structures within the error of 15 % at the center of the device, which verified the validity and accuracy of the numerical model for double-sided heat dissipation. The proposed models and results could contribute to the development of effective thermal design tools for double-sided thermal power modules.@en

During operation in environments containing hydrogen sulfide (H2S), such as in offshore and coastal environments, sintered nanoCu in power electronics is susceptible to degradation caused by corrosion. In this study, experimental and molecular dynamics (MD) simulation analyses were conducted to investigate the evolution and mechanism of H2S-induced corrosion of sintered nanoCu, and bulk Cu was used as the reference. The following results are obtained: (1) Both sintered nanoCu and bulk Cu reacted with O2 prior to reacting with H2S, forming Cu2O, Cu2S, CuO, and CuS. In addition, sintered nanoCu exhibited more severe corrosion. (2) For both sintered nanoCu and bulk Cu, H2S-induced corrosion resulted in the deterioration of electrical, thermal, and mechanical properties, and sintered nanoCu experienced a greater extent of deterioration. (3) As was ascertained through Reactive Force Field (ReaxFF) MD simulations, the penetration of H2S and O2 combined with the upward migration of Cu resulted in the formation of a corrosion film. In addition, compared to bulk Cu, the H2S and O2 penetration in the sintered nanoCu structure was observed to occur to a greater depth, accounting for the more pronounced performance degradation.@en

SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities associated with existing wire-bonding packaging methods. To address this challenge, a 1200 V/136 A fan-out panel-level packaging (FOPLP) SiC MOSFET with a size of $8 imes {8} imes {0}.{75}$ mm was proposed. The electrical parameters of the devices were characterized experimentally. Both the static and dynamic parameters of the package matched the bare die values, which confirmed the functioning of the proposed packaging method for SiC MOSFET. The package parasitic inductance, thermal resistance, and soldering stress were analyzed through simulations. The reliability of the packages was evaluated by performing the thermal cycling test. The experimental results revealed that: 1) SiC MOSFET FOPLP had 0.36 nH drain-source parasitic inductance at 100 kHz, a 96% reduction compared with a conventional wire-bonded package; 2) double-sided cooling enabled the packages to exhibit a thermal resistance as low as 0.55 °C/W; and 3) after 2000 thermal cycling cycles, drain-source ON-state resistance [RDS(on)] increased by less than 2%, which revealed the higher reliability of the package under thermal cycling.@en

A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via interconnection reduces the size, thermal resistance, and parasitic inductance of power module packaging. In this study, the effect of the RDL via size on the reliability of a FOPLP SiC MOSFET power module was investigated. To improve the thermal management and thermal cycling reliability of the designed SiC module, genetic algorithm (GA)–assisted optimization methods were proposed to optimize the RDL via size. First, the heat dissipation and the plastic work density of the SiC MOSFET module with various via diameters and depths were simulated using finite element simulations. Next, both the ant colony optimization-backpropagation neural network (ACOBPNN) with finite element simulation and the nondominated sorting genetic algorithm (NSGA-II) with theoretical model were developed to optimize the RDL via size. The results revealed that: (1) smaller via depth and size reduce the heat dissipation and thermal cycling reliability of the RDL via; (2) through both the ACO-BPNN and NSGA-II, the same optimal heat dissipation and plastic work density can be achieved in the designed module. (3) ACO-BPNN with assist of finite element simulation can provide a more effective optimization in complex packaging structure.@en

Considerable advancements in power semiconductor devices have resulted in such devices being increasingly adopted in applications of energy generation, conversion, and transmission. Hence, we proposed a fan-out panel-level packaging (FOPLP) design for 30-V Si-based metal-oxide-semiconductor field-effect transistor (MOSFET). To achieve superior reliability of packaging, we applied the nondominated sorting genetic algorithm with elitist strategy (NSGA-II) and ant colony optimization-backpropagation neural network (ACO-BPNN) to optimize the design of redistribution layer (RDL) in FOPLP. We first quantified the thermal resistance and thermomechanical coupling stress of the designed package under thermal cycling loading. Next, NSGA-II and ACO-BPNN were used to optimize the size of the RDL blind via. Finally, the effectiveness of the proposed reliability optimization methods was verified by performing thermal shock reliability aging tests on the prepared devices.@en

The kinetics of the transformation of metallic Fe to the active Fe carbide phase at the start of the Fischer-Tropsch (FT) reaction were studied. The diffusion rates of C atoms going in or out of the lattice were determined using 13C-labeled synthesis gas in combination with measurements of the transient 12C and 13C contents in the carbide by temperature-programmed hydrogenation. In the initial 20 min, C diffuses rapidly into the lattice occupying thermodynamically very stable interstitial sites. The FT reaction starts already during these early stages of carburization. When reaching steady state, the diffusion rates of C in and out of the lattice converge and the FT reaction continues via two parallel reaction mechanisms. It appears that the two outer layers of the Fe carbide are involved in hydrocarbon formation via a slow Mars-Van Krevelen-like reaction contributing to ∼10% of the total activity, while the remainder of the activity stems from a fast Langmuir-Hinshelwood reaction occurring over a minor part of the catalyst surface. @en

As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this challenge, this study proposes a multi-objective optimization design method for parasitic inductance (L), thermal strain (?), and thermal resistance (R) of SiC MOSFETs with Fan-Out Panel-Level Packaging (FOPLP). First, the orthogonal experimental design was employed to investigate the thickness effects of baseplate, solder, die and redistribution layer (RDL) on L, e, and R. Then, the multi-objective optimization was developed to simultaneously reduce L, G, and R. Finally the fatigue lifetimes of the optimized and initial SiC MOSFET FOPLP structures were compared to verify the optimization's accuracy. Study findings include: (1) Solder thickness was the most significant influence factor for L, e and R of SiC MOSFET FOPLP, L and R increased, and e decreased with increasing solder thickness; (2) The proposed multi-objective optimization method coupled with a genetic algorithm achieved 14.79, 8.96, and 9.28% reduction of L, e, and R, respectively; (3) The fatigue lifetime of solder (SAC305) was evaluated using the Coffin-Manson model, with predicted lifetimes before and after optimization being 6786 and 7085 cycles, respectively, demonstrating that the proposed approach significantly enhanced the designed SiC MOSFET FOPLP's long-term thermal cycling reliability. @en

Thermal management has always played a significant role in power module design. Double-sided heat dissipation is more efficient at transferring heat than the traditional package. Although there are several thermal modeling approaches to power modules, the application of the numerical models, which are computationally fast and accurate, has rarely been investigated for double-sided heat dissipation scenarios. This paper proposes a numerical heat conduction model of a double-sided heat dissipation power module with multiple chips embedded. The model was developed by solving Laplace’s equation for the temperature distribution of steady state heat transfer using the separated variable method. The individual chip placement, two-chip distance and orientation, and four-chip placement were discussed through this modeling approach. The optimal layout was found. Then, a half-bridge topology module that consisted of two chips was investigated. To verify the accuracy of the numerical model, Finite Element Analysis (FEA) of the model was performed using the same boundary conditions. The experiments were applied on the power cycling tester to extract the junction temperature and case temperature. The numerical methods show good temperature prediction accuracy compared to both FEA and experiments.@en

Thermal management has always played a significant role in power module design. Double-sided heat dissipation is more efficient at transferring heat than the traditional package. Although there are several thermal modeling approaches to power modules, the application of the numerical models, which are computationally fast and accurate, has rarely been investigated for double-sided heat dissipation scenarios. This paper proposes a numerical heat conduction model of a double-sided heat dissipation power module with multiple chips embedded. The model was developed by solving Laplace’s equation for the temperature distribution of steady state heat transfer using the separated variable method. The individual chip placement, two-chip distance and orientation, and four-chip placement were discussed through this modeling approach. The optimal layout was found. Then, a half-bridge topology module that consisted of two chips was investigated. To verify the accuracy of the numerical model, Finite Element Analysis (FEA) of the model was performed using the same boundary conditions. The experiments were applied on the power cycling tester to extract the junction temperature and case temperature. The numerical methods show good temperature prediction accuracy compared to both FEA and experiments.@en

As one of solid state lighting sources, wafer-level chip scale Light Emitting Diode (LED) packages has gained much attention, because of its compact size, high power and high optical performance. For this package to be effective, the solder layer plays the critical role in heat dissipation, mechanical support and electrical conductivity. Among all types of solder materials, Sn-3.0Ag-0.5Cu (SAC305) solder alloy is considered as one of best chip-attachment candidates due to its acceptable cost, good solderability, and favorable shear strength. However, such solder connections are prone to fatigue over time due to thermal or power cycling. This paper models the wafer level chip scale LEDs soldered on both aluminum oxide and aluminum substrates with SAC305 solder alloy. Thermal cycling conditions are simulated to assess the fatigue damage of the solder interconnection. Von Mises stress and plastic work density are utilized to represent the fatigue damage per cycle by using finite element analysis (FEA) method. Important design considerations include the effects of LED chip substrate, thickness of the solder interconnections, void ratio in the solder connections and PCB substrate. The result is a set of fatigue damage accumulation metrics.@en