L.C.N. de Vreede
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29 records found
1
Meeting these requirements using the currently allocated microwave spectrum has become challenging due to limited available bandwidth and the physical constraints associated with longer wavelengths. Consequently, both research and, more recently, commercial applications have been shifting toward higher-frequency spectrum ranges, where wider bandwidths and shorter wavelengths can be exploited. To support this transition, numerous studies have been published in recent years, documenting significant progress in the electronic device development cycle. Nevertheless, despite these advances, several areas still require improvement. This thesis addresses some of the persistent limitations in the measurement and characterization of electronic devices (both before and after fabrication) where the community continues to rely on low-frequency methods, techniques, or data extrapolated from lower frequencies and applied at higher frequencies.... ...
Meeting these requirements using the currently allocated microwave spectrum has become challenging due to limited available bandwidth and the physical constraints associated with longer wavelengths. Consequently, both research and, more recently, commercial applications have been shifting toward higher-frequency spectrum ranges, where wider bandwidths and shorter wavelengths can be exploited. To support this transition, numerous studies have been published in recent years, documenting significant progress in the electronic device development cycle. Nevertheless, despite these advances, several areas still require improvement. This thesis addresses some of the persistent limitations in the measurement and characterization of electronic devices (both before and after fabrication) where the community continues to rely on low-frequency methods, techniques, or data extrapolated from lower frequencies and applied at higher frequencies....
Digital Transmitters
A Signal Processing Perspective
The work described in this dissertation is part is the research projects DIPLOMAT and DRASTIC, which target the implementation of high-power digital transmitters. As such, they introduced a new dual-chip DTX approach that features a CMOS controller, which is high-density flip-chip interconnected to an RF-power LDMOS MMIC. This LDMOS MMIC contains switch banks with hundreds of gate segments which can be individually controlled by the CMOS controller. The resulting combination enables high-resolution RF power DTX operation, which is demonstrated in this dissertation. Following this approach, higher DTX system efficiencies and modulation bandwidths come within reach. Although being part of a bigger research activity, the prime and unique focus of this dissertation is the signal processing aspects of the digital transmitter, with the main research question:
“How can we control a segmented digital transmitter output stage such that the optimum RF waveform is created that is capable of supporting wideband modulation, with high spectral purity and efficiency?”
To answer this question, this dissertation provides a comprehensive overview and analysis of the various DTX architectures in the literature. Existing shortcomings of DTX approaches are identified, and where needed, new (DTX signal processing) techniques are proposed to diminish or overcome them. In conclusion, a totally new DTX upconversion technique is proposed, which allows full control over the dc, fundamental, and harmonic content of the RF output waveform, as such enabling the selection of the optimum trade-off between energy efficiency and wideband spectral purity for a given application.
This dissertation is divided in three parts; the first part focusses on digital RF current waveforms, their power utilization and efficiency, the second part discusses the dynamic behaviour of RF-mixing-DACs, and the third part introduces the aforementioned new DTX upconversion technique.
...
The work described in this dissertation is part is the research projects DIPLOMAT and DRASTIC, which target the implementation of high-power digital transmitters. As such, they introduced a new dual-chip DTX approach that features a CMOS controller, which is high-density flip-chip interconnected to an RF-power LDMOS MMIC. This LDMOS MMIC contains switch banks with hundreds of gate segments which can be individually controlled by the CMOS controller. The resulting combination enables high-resolution RF power DTX operation, which is demonstrated in this dissertation. Following this approach, higher DTX system efficiencies and modulation bandwidths come within reach. Although being part of a bigger research activity, the prime and unique focus of this dissertation is the signal processing aspects of the digital transmitter, with the main research question:
“How can we control a segmented digital transmitter output stage such that the optimum RF waveform is created that is capable of supporting wideband modulation, with high spectral purity and efficiency?”
To answer this question, this dissertation provides a comprehensive overview and analysis of the various DTX architectures in the literature. Existing shortcomings of DTX approaches are identified, and where needed, new (DTX signal processing) techniques are proposed to diminish or overcome them. In conclusion, a totally new DTX upconversion technique is proposed, which allows full control over the dc, fundamental, and harmonic content of the RF output waveform, as such enabling the selection of the optimum trade-off between energy efficiency and wideband spectral purity for a given application.
This dissertation is divided in three parts; the first part focusses on digital RF current waveforms, their power utilization and efficiency, the second part discusses the dynamic behaviour of RF-mixing-DACs, and the third part introduces the aforementioned new DTX upconversion technique.
Chapter 2 examines the fundamental performance metrics in power amplifier (PA) design, which serves as a critical bottleneck in mm-wave 5G systems. It reviews various PA classes, explores challenges associated with mm-wave operation, and discusses existing solutions. The chapter also introduces design equations for a 2-way Doherty PA and evaluates its operation and performance. While N-way Doherty PAs show promise for achieving required power levels and improving average efficiency in complementary metal-oxide-semiconductor (CMOS) technology, they face limitations such as narrow bandwidth, low gain, nonlinearity, and sensitivity to voltage standingwave ratio (VSWR). These challenges make mm-wave N-way Doherty PAs an active area of research.
Chapter 3 presents a systematic design process for 3-/4-/5-way Doherty networks using transmission lines (TLs) and lumped elements, which can also be extended to N-way configurations. These power combiners are designed and compared using both lossless and lossy components with a quality factor (QF) of 15/25 for inductors/capacitors at 30 GHz, while their PAs are modeled as ideal current sources. Based on this analysis, it reveals that the 3-way network is themost efficient and practical candidate for mm-wave frequencies, requiring fewer components and offering comparable performance to the 4-way configuration.
Chapter 4 introduces a single-supply balun-first 3-way parallel Doherty PA designed for mm-wave 5G applications. This design incorporates a bandwidth enhancement technique to broaden the operational frequency range, improve broadband PBO efficiency, and reduce impedance mismatches. Realized in 40 nm CMOS bulk technology with a core area of 0.77mm2, the prototype achieves a Psat/peak gain of over 20 dBm/16 dB and demonstrates a drain efficiency (DE) of 15 %/22 %/33% at 9.5 dB/6 dB /0 dB PBO across a 24–30GHz band. It supports 64-QAM OFDM signals with an EVM/ACLR of −24.3 dB/−30.1 dBc at 9.4dBm average output power (Pavg) and achieves promising results with 1024-QAM signals. However, the 3-way Doherty PAs show efficiency limitations compared to 2-way Doherty PAs at 9.5 dB PBO due to finite QF of the drain-source capacitance (Cds), device channel resistance, and higher passive losses of the output network.
Chapter 5 describes a 4×2-way Doherty PA designed for mm-wave 5G applications. Featuring an advanced output combiner with four differential 2-way Doherty networks, two quadrature hybrid couplers (QHCs), and a balun, this design enhances Pout and PBO efficiency. Realized in 40 nm CMOS bulk technology with a core area of 1.54mm2, the prototype achieves a Psat/peak gain of 25.2dBm/25.5 dB and a DE of 17.5 %/10% at 0 dB/6 dB PBO across a 26–32GHz band. It delivers exceptional EVM/ACLR performance for both 64-QAM and 1024-QAM OFDM signals and demonstrates resilience to VSWR variations. By incorporating artificial intelligence digital pre-distortion (AI-DPD), the PA achieves a Pavg of 15.3dBm for 400MHz 64-QAM signals, making it a strong candidate for 5G mm-wave TXs or phased arrays.
Chapter 6 summarizes the findings of the thesis, compares them with the state-of-the-art, and highlights key conclusions. It also suggests future research directions, such as a novel floor plan for the TX chain. This includes the use of four 2-way series Doherty PAs to achieve high output power and improved PBO efficiency. Additionally, flip-chip integration is proposed to position antenna connection pads centrally, reducing interconnect parasitics and unwanted losses. ...
Chapter 2 examines the fundamental performance metrics in power amplifier (PA) design, which serves as a critical bottleneck in mm-wave 5G systems. It reviews various PA classes, explores challenges associated with mm-wave operation, and discusses existing solutions. The chapter also introduces design equations for a 2-way Doherty PA and evaluates its operation and performance. While N-way Doherty PAs show promise for achieving required power levels and improving average efficiency in complementary metal-oxide-semiconductor (CMOS) technology, they face limitations such as narrow bandwidth, low gain, nonlinearity, and sensitivity to voltage standingwave ratio (VSWR). These challenges make mm-wave N-way Doherty PAs an active area of research.
Chapter 3 presents a systematic design process for 3-/4-/5-way Doherty networks using transmission lines (TLs) and lumped elements, which can also be extended to N-way configurations. These power combiners are designed and compared using both lossless and lossy components with a quality factor (QF) of 15/25 for inductors/capacitors at 30 GHz, while their PAs are modeled as ideal current sources. Based on this analysis, it reveals that the 3-way network is themost efficient and practical candidate for mm-wave frequencies, requiring fewer components and offering comparable performance to the 4-way configuration.
Chapter 4 introduces a single-supply balun-first 3-way parallel Doherty PA designed for mm-wave 5G applications. This design incorporates a bandwidth enhancement technique to broaden the operational frequency range, improve broadband PBO efficiency, and reduce impedance mismatches. Realized in 40 nm CMOS bulk technology with a core area of 0.77mm2, the prototype achieves a Psat/peak gain of over 20 dBm/16 dB and demonstrates a drain efficiency (DE) of 15 %/22 %/33% at 9.5 dB/6 dB /0 dB PBO across a 24–30GHz band. It supports 64-QAM OFDM signals with an EVM/ACLR of −24.3 dB/−30.1 dBc at 9.4dBm average output power (Pavg) and achieves promising results with 1024-QAM signals. However, the 3-way Doherty PAs show efficiency limitations compared to 2-way Doherty PAs at 9.5 dB PBO due to finite QF of the drain-source capacitance (Cds), device channel resistance, and higher passive losses of the output network.
Chapter 5 describes a 4×2-way Doherty PA designed for mm-wave 5G applications. Featuring an advanced output combiner with four differential 2-way Doherty networks, two quadrature hybrid couplers (QHCs), and a balun, this design enhances Pout and PBO efficiency. Realized in 40 nm CMOS bulk technology with a core area of 1.54mm2, the prototype achieves a Psat/peak gain of 25.2dBm/25.5 dB and a DE of 17.5 %/10% at 0 dB/6 dB PBO across a 26–32GHz band. It delivers exceptional EVM/ACLR performance for both 64-QAM and 1024-QAM OFDM signals and demonstrates resilience to VSWR variations. By incorporating artificial intelligence digital pre-distortion (AI-DPD), the PA achieves a Pavg of 15.3dBm for 400MHz 64-QAM signals, making it a strong candidate for 5G mm-wave TXs or phased arrays.
Chapter 6 summarizes the findings of the thesis, compares them with the state-of-the-art, and highlights key conclusions. It also suggests future research directions, such as a novel floor plan for the TX chain. This includes the use of four 2-way series Doherty PAs to achieve high output power and improved PBO efficiency. Additionally, flip-chip integration is proposed to position antenna connection pads centrally, reducing interconnect parasitics and unwanted losses.
NMSE of -44.61 dB. Since the TCN-DPD architecture was completed, this proposed model’s performance in PA and DPD benchmarks is desirable to be tested, and later experiments will use the same dataset and framework as the benchmark of activation function did. In PA benchmarking, the TCN model achieves SIM-NMSE -34.99 dB on average compared to other models, LSTM, GRU, RVTDCNN, VDLSTM, PNTDNN, and DGRU. This achievement shows the TCN architecture has a high potential to handle a range of dependencies efficiently in the DPD application system. Furthermore, DPD benchmarking is the main experiment in this thesis. Two architectures were selected as the pre-trained PA model: the DGRU and TCN models. When the pre-trained PA is fixed as the DGRU model, TCN-DPD demonstrates superior linearization performance with only 500 real-valued parameters, achieving averaged and simulated ACPRs of -51.58/-49.26 dBc (L/R), EVM of -47.52 dB, and NMSE of -44.61dB. The results are simulated ACPRs of -50.39/-50.01 dBc (L/R), EVM of -47.88 dB, and NMSE of -45.51 dB in average when the pre-trained PA model is TCN. Both DPD benchmarks include different DNN-DPD models, and TCN-DPD has superior performance in the comparison, especially the SIM-NMSE and SIM-EVM performance is significantly higher than other models when the pre-trained model is TCN. These results establish TCN-DPD as a promising solution for efficient wideband PA linearization. Moreover, the evaluation extended to DNN-DPD performance with various numbers of parameters ranging from 200 to 1000, where the TCN-200 model highlighted its effectiveness by showing impressive results in SIM-NMSE -41.27dB/-43.51dB(DGRU/TCN PA), achieving superior linearization performance while using significantly fewer parameters than existing deep neural network solutions, proving the TCN-DPD model’s parameters efficiency.
The research in this thesis conclusively demonstrates that TCNs can be implemented in DPD applications, providing more parameters efficiency, better performance, and robust PA linearization solutions, potentially setting a new alternative in DPD technology. ...
NMSE of -44.61 dB. Since the TCN-DPD architecture was completed, this proposed model’s performance in PA and DPD benchmarks is desirable to be tested, and later experiments will use the same dataset and framework as the benchmark of activation function did. In PA benchmarking, the TCN model achieves SIM-NMSE -34.99 dB on average compared to other models, LSTM, GRU, RVTDCNN, VDLSTM, PNTDNN, and DGRU. This achievement shows the TCN architecture has a high potential to handle a range of dependencies efficiently in the DPD application system. Furthermore, DPD benchmarking is the main experiment in this thesis. Two architectures were selected as the pre-trained PA model: the DGRU and TCN models. When the pre-trained PA is fixed as the DGRU model, TCN-DPD demonstrates superior linearization performance with only 500 real-valued parameters, achieving averaged and simulated ACPRs of -51.58/-49.26 dBc (L/R), EVM of -47.52 dB, and NMSE of -44.61dB. The results are simulated ACPRs of -50.39/-50.01 dBc (L/R), EVM of -47.88 dB, and NMSE of -45.51 dB in average when the pre-trained PA model is TCN. Both DPD benchmarks include different DNN-DPD models, and TCN-DPD has superior performance in the comparison, especially the SIM-NMSE and SIM-EVM performance is significantly higher than other models when the pre-trained model is TCN. These results establish TCN-DPD as a promising solution for efficient wideband PA linearization. Moreover, the evaluation extended to DNN-DPD performance with various numbers of parameters ranging from 200 to 1000, where the TCN-200 model highlighted its effectiveness by showing impressive results in SIM-NMSE -41.27dB/-43.51dB(DGRU/TCN PA), achieving superior linearization performance while using significantly fewer parameters than existing deep neural network solutions, proving the TCN-DPD model’s parameters efficiency.
The research in this thesis conclusively demonstrates that TCNs can be implemented in DPD applications, providing more parameters efficiency, better performance, and robust PA linearization solutions, potentially setting a new alternative in DPD technology.
To mitigate the high path loss associated with mm-wave frequencies, greater focus has been placed on low-band and mid-band radios. Even the operating frequency of sub-6GHz radios has been extended to sub-7GHz. However, the congested sub-7GHz spectrum has kept the offset frequency of close-in blockers constant compared to the previous standards, such as 4G. This imposes stringent requirements on receiver (RX) selectivity and linearity.
This thesis presents reconfigurable wideband low noise transconductance amplifier (LNTA)-based RXs for sub-7GHz radios. The proposed RXs have high bandwidth and decent noise figure (NF) performance to employ highorder modulation schemes and achieve a high data rate. This thesis introduces techniques to enhance the RX selectivity for suppressing the close-in blockers of 5G user equipment, microcell base station, and local area base station applications. Moreover, this thesis proposes RXs with decent far-out out-ofband linearity for base station co-location applications where strong blockers are present from other standards.
Chapter 1 outlines the evolution of wireless communication leading to 5G applications. It introduces the 5G standard and highlights its stringent requirements on RX operating frequency, bandwidth, noise figure, and linearity. Following a brief discussion on N-path filters and their role in enabling wideband RXs, Chapter 1 reviews state-of-the-art RX designs and identifies their limitations for 5G applications. Finally, it defines the objectives and scope of this thesis.
Chapter 2 targets 5G user equipment applications and introduces a wideband blocker tolerant receiver fabricated in 40-nm bulk CMOS technology. By incorporating programmable zeros and a second-order transimpedance amplifier (TIA), the RX achieves enhanced selectivity and fulfills the stringent linearity requirements of 5G for close-in blockers. An auxiliary path is employed to reduce the RX input impedance at far-out offset frequencies, creating a current-sinking path for far-out blockers. In this way, the proposed RX achieves decent out-ofband linearity performance. To determine the component values for both the RF front-end and the second-order TIA, two design guides are developed based on the 5G standard. The proposed RX successfully meets 5G requirements for reference sensitivity and out-of-band blocking tests.
Chapter 3 presents a wideband RX for 5G microcell base station applications. This Chapter targets microcell co-location scenarios. Hence, it adopts a parallel preselect filter to achieve decent far-out out-of-band B1dB. Third-order RF and baseband filters deliver sixth-order channel selectivity to handle close-in blockers of base station applications, where the ratio of blocker offset frequency to RX bandwidth is 1/10. Additionally, a translational feedback network provides input matching and minimizes in-band gain ripple to below 0.5 dB. The RX’s reconfigurable architecture supports a low-noise mode and linear mode. Leveraging its current-mode operation and sharp filtering, the implemented RX in 40-nm CMOS technology complies with all 3GPP requirements for reference sensitivity, in-band blocking, and out-of-band blocking.
Chapter 4 introduces a wideband LNTA-based RX for 5G local area base station applications. The proposed RX covers both low- and mid-band frequencies. Firstly, this Chapter determines the optimal TIA architecture for 5G applications. To do so, the first-order and Rauch TIAs were thoroughly analyzed and compared in terms of transfer function, input impedance, loop gain, and noise performance. The Rauch TIA was selected for its superior selectivity and higher loop gain for out-of-band signals, with additional selectivity enhancement by adopting a third-order high-pass filter integrated in parallel with the TIA feedback resistor. The RX incorporates the Rauch TIAs with passive mixers and an LNTA featuring an N-path notch filter in its feedback. To enhance the RX’s operating frequency range, two switch sets at the LNTA output (one for the N-path notch filter and another for the down-converting mixers) were merged. Furthermore, the band-pass characteristic of the TIA input impedance is leveraged to introduce positive feedback in the LNTA, increasing the 3-dB bandwidth without compromising out-of-band rejection. The resulting design is fabricated using 40 nm bulk CMOS technology, and the proposed RX satisfies 3GPP requirements for reference sensitivity, in-band blocking, close-in blocking, and out-of-band blocking, making it a strong candidate for 5G local area base station applications.
Chapter 5 provides a brief discussion of the proposed ideas presented in this thesis and offers suggestions for future research directions. ...
To mitigate the high path loss associated with mm-wave frequencies, greater focus has been placed on low-band and mid-band radios. Even the operating frequency of sub-6GHz radios has been extended to sub-7GHz. However, the congested sub-7GHz spectrum has kept the offset frequency of close-in blockers constant compared to the previous standards, such as 4G. This imposes stringent requirements on receiver (RX) selectivity and linearity.
This thesis presents reconfigurable wideband low noise transconductance amplifier (LNTA)-based RXs for sub-7GHz radios. The proposed RXs have high bandwidth and decent noise figure (NF) performance to employ highorder modulation schemes and achieve a high data rate. This thesis introduces techniques to enhance the RX selectivity for suppressing the close-in blockers of 5G user equipment, microcell base station, and local area base station applications. Moreover, this thesis proposes RXs with decent far-out out-ofband linearity for base station co-location applications where strong blockers are present from other standards.
Chapter 1 outlines the evolution of wireless communication leading to 5G applications. It introduces the 5G standard and highlights its stringent requirements on RX operating frequency, bandwidth, noise figure, and linearity. Following a brief discussion on N-path filters and their role in enabling wideband RXs, Chapter 1 reviews state-of-the-art RX designs and identifies their limitations for 5G applications. Finally, it defines the objectives and scope of this thesis.
Chapter 2 targets 5G user equipment applications and introduces a wideband blocker tolerant receiver fabricated in 40-nm bulk CMOS technology. By incorporating programmable zeros and a second-order transimpedance amplifier (TIA), the RX achieves enhanced selectivity and fulfills the stringent linearity requirements of 5G for close-in blockers. An auxiliary path is employed to reduce the RX input impedance at far-out offset frequencies, creating a current-sinking path for far-out blockers. In this way, the proposed RX achieves decent out-ofband linearity performance. To determine the component values for both the RF front-end and the second-order TIA, two design guides are developed based on the 5G standard. The proposed RX successfully meets 5G requirements for reference sensitivity and out-of-band blocking tests.
Chapter 3 presents a wideband RX for 5G microcell base station applications. This Chapter targets microcell co-location scenarios. Hence, it adopts a parallel preselect filter to achieve decent far-out out-of-band B1dB. Third-order RF and baseband filters deliver sixth-order channel selectivity to handle close-in blockers of base station applications, where the ratio of blocker offset frequency to RX bandwidth is 1/10. Additionally, a translational feedback network provides input matching and minimizes in-band gain ripple to below 0.5 dB. The RX’s reconfigurable architecture supports a low-noise mode and linear mode. Leveraging its current-mode operation and sharp filtering, the implemented RX in 40-nm CMOS technology complies with all 3GPP requirements for reference sensitivity, in-band blocking, and out-of-band blocking.
Chapter 4 introduces a wideband LNTA-based RX for 5G local area base station applications. The proposed RX covers both low- and mid-band frequencies. Firstly, this Chapter determines the optimal TIA architecture for 5G applications. To do so, the first-order and Rauch TIAs were thoroughly analyzed and compared in terms of transfer function, input impedance, loop gain, and noise performance. The Rauch TIA was selected for its superior selectivity and higher loop gain for out-of-band signals, with additional selectivity enhancement by adopting a third-order high-pass filter integrated in parallel with the TIA feedback resistor. The RX incorporates the Rauch TIAs with passive mixers and an LNTA featuring an N-path notch filter in its feedback. To enhance the RX’s operating frequency range, two switch sets at the LNTA output (one for the N-path notch filter and another for the down-converting mixers) were merged. Furthermore, the band-pass characteristic of the TIA input impedance is leveraged to introduce positive feedback in the LNTA, increasing the 3-dB bandwidth without compromising out-of-band rejection. The resulting design is fabricated using 40 nm bulk CMOS technology, and the proposed RX satisfies 3GPP requirements for reference sensitivity, in-band blocking, close-in blocking, and out-of-band blocking, making it a strong candidate for 5G local area base station applications.
Chapter 5 provides a brief discussion of the proposed ideas presented in this thesis and offers suggestions for future research directions.
However, the typical supply voltages of digital-oriented CMOS technologies are too low to reach the power levels required for mMIMO base stations. The market for high-power RF applications optimizes their technologies for minimized losses, and increased power density and gain. This results in a performance gap between what digital CMOS can provide today and what is required for next-generation base stations. Benefiting from the increased functionality and power savings from the developments in digital CMOS while maintaining the power levels provided by technologies—such as LDMOS or GaN—is taking the best of both worlds. This leads to the research objective of this dissertation:
"How can digital-oriented low-power CMOS technology be combined with high-power RF technology such that energy-efficient operation of next-generation sub-7 GHz base stations can be achieved?"
To answer this question, several demonstrators have been designed to pioneer combining CMOS technologies with high-power RF technologies.
The knowledge gained from designing these demonstrators is presented in the early chapters of this dissertation, providing the reader with important aspects of designing high-power DTXs. This ranges from practical aspects of the heterogeneous integration used, such as electrical compatibility and packaging, to designing high-speed drivers and the high-level modeling of DTXs. A mathematical definition of a DTX's transfer is proposed, which relates its numerical baseband input to the output power at RF. Further, a power model capable of estimating DTX performance in terms of power and efficiency is proposed. This power model combines the theory, presented in the chapters before, into a handful of equations that describe the power relations in a DTX by first-order approximation, which are useful for hand calculations and can help conceptual understanding of the underlying relations. These background chapters guide the reader in implementing future high-power DTXs, and the power relations can be used to optimize these future designs from both the digital CMOS and power technology perspectives. ...
However, the typical supply voltages of digital-oriented CMOS technologies are too low to reach the power levels required for mMIMO base stations. The market for high-power RF applications optimizes their technologies for minimized losses, and increased power density and gain. This results in a performance gap between what digital CMOS can provide today and what is required for next-generation base stations. Benefiting from the increased functionality and power savings from the developments in digital CMOS while maintaining the power levels provided by technologies—such as LDMOS or GaN—is taking the best of both worlds. This leads to the research objective of this dissertation:
"How can digital-oriented low-power CMOS technology be combined with high-power RF technology such that energy-efficient operation of next-generation sub-7 GHz base stations can be achieved?"
To answer this question, several demonstrators have been designed to pioneer combining CMOS technologies with high-power RF technologies.
The knowledge gained from designing these demonstrators is presented in the early chapters of this dissertation, providing the reader with important aspects of designing high-power DTXs. This ranges from practical aspects of the heterogeneous integration used, such as electrical compatibility and packaging, to designing high-speed drivers and the high-level modeling of DTXs. A mathematical definition of a DTX's transfer is proposed, which relates its numerical baseband input to the output power at RF. Further, a power model capable of estimating DTX performance in terms of power and efficiency is proposed. This power model combines the theory, presented in the chapters before, into a handful of equations that describe the power relations in a DTX by first-order approximation, which are useful for hand calculations and can help conceptual understanding of the underlying relations. These background chapters guide the reader in implementing future high-power DTXs, and the power relations can be used to optimize these future designs from both the digital CMOS and power technology perspectives.
Unlike digital processors, whose performance and efficiency improve with semiconductor technology scaling, the performance of analog/RF front ends mainly relies on circuit and systemarchitecture innovations. Luckily, operating at mm-wave frequencies unlocks new opportunities, and an approach using those can exceed initial expectations. In this context, this dissertation introduces a series of innovative designs and techniques enhancing the performance and efficiency of power amplifiers (PAs) and transceivers for 5G mm-wave systems.... ...
Unlike digital processors, whose performance and efficiency improve with semiconductor technology scaling, the performance of analog/RF front ends mainly relies on circuit and systemarchitecture innovations. Luckily, operating at mm-wave frequencies unlocks new opportunities, and an approach using those can exceed initial expectations. In this context, this dissertation introduces a series of innovative designs and techniques enhancing the performance and efficiency of power amplifiers (PAs) and transceivers for 5G mm-wave systems....
Class-F push-push totem-pole power amplifier
For 5G base stations
As 5G is rapidly growing, wireless communication systems require wideband, compact and highly efficient power amplifier modules (PA) to drive the base station antenna arrays. Doherty PAs are implemented in most base stations. The final stage in these power amplifier modules has high supply voltages (28-50 V) to generate a high output power of >20 W at reasonable output impedance levels. This work replaces the ‘classical’ single-ended cascode PA to drive the Doherty PA, with a series push-pull (or totem-pole) PA to increase the efficiency and bandwidth of the driver. The series push pull designs can reach peak efficiencies of 70.7%, which is about 10 percentage points higher than the efficiency of the single-ended PA. To ensure that a fair comparison is made between the designs, the series push-pull designs operate at 5 V and 10 V supply, in order to generate an output voltage swing of 5 V and 10 V respectively. This is compared to the single-ended PA with a 5 V supply and 10 V output swing. Simulation results show that the series push-pull design does indeed increase the efficiency of the driver whilst having minimal AM-AM distortion (<1 dB) at the design frequency of 3.6 GHz. ...
As 5G is rapidly growing, wireless communication systems require wideband, compact and highly efficient power amplifier modules (PA) to drive the base station antenna arrays. Doherty PAs are implemented in most base stations. The final stage in these power amplifier modules has high supply voltages (28-50 V) to generate a high output power of >20 W at reasonable output impedance levels. This work replaces the ‘classical’ single-ended cascode PA to drive the Doherty PA, with a series push-pull (or totem-pole) PA to increase the efficiency and bandwidth of the driver. The series push pull designs can reach peak efficiencies of 70.7%, which is about 10 percentage points higher than the efficiency of the single-ended PA. To ensure that a fair comparison is made between the designs, the series push-pull designs operate at 5 V and 10 V supply, in order to generate an output voltage swing of 5 V and 10 V respectively. This is compared to the single-ended PA with a 5 V supply and 10 V output swing. Simulation results show that the series push-pull design does indeed increase the efficiency of the driver whilst having minimal AM-AM distortion (<1 dB) at the design frequency of 3.6 GHz.
To drive the gate segments in this custom VT LDMOS technology with a gate-to-source voltage (VGS) swing of 2.2 V, a driver is proposed comprising: inverter chains, a level shifter, and a high-voltage output buffer. This driver is fully digital and can be implemented using thin-oxide bulk CMOS devices whose VDD is limited to 1.1 V. A model of the DTX comprising only the drivers and DPA at the circuit level is created in ADS to evaluate the output power, drain efficiency, and system efficiency. The DTX is simulated at 3.5 GHz full power and achieves an output power of 19.79 W/23.43 W, a drain efficiency of 67.28%/59.22%, and a system efficiency of 60.34%/54.48% with a non-empirical and empirical model of LDMOS, respectively. Rise and fall times of around 20% of the RF cycle (tr = tf = 0.2/fc) are found to be the most suitable in terms of power consumption and system efficiency. ...
To drive the gate segments in this custom VT LDMOS technology with a gate-to-source voltage (VGS) swing of 2.2 V, a driver is proposed comprising: inverter chains, a level shifter, and a high-voltage output buffer. This driver is fully digital and can be implemented using thin-oxide bulk CMOS devices whose VDD is limited to 1.1 V. A model of the DTX comprising only the drivers and DPA at the circuit level is created in ADS to evaluate the output power, drain efficiency, and system efficiency. The DTX is simulated at 3.5 GHz full power and achieves an output power of 19.79 W/23.43 W, a drain efficiency of 67.28%/59.22%, and a system efficiency of 60.34%/54.48% with a non-empirical and empirical model of LDMOS, respectively. Rise and fall times of around 20% of the RF cycle (tr = tf = 0.2/fc) are found to be the most suitable in terms of power consumption and system efficiency.
Simultaneously, the advancements in nano-scale CMOS technologies have made transistors smaller and better suited for digital signal processing, with improved high-frequency performance for RF mixed-signal circuits.
These advancements impact wireless RF transceivers creating the need to explore transmitter architectures beyond the level of the most established ones, which are exclusively analog up to date, by pushing them towards incorporating more digital circuitry. Consequently, the primary research question addressed in this is: “What are the potential performance advantages when the strength of (high-speed) digital CMOS is utilized within an RF front-end?”
To answer this research question, this thesis proposes new architectures for digitalintensive transmitter line-ups. These architectures aim to enhance linearity, bandwidth, and power efficiency, and enable the full utilization of CMOS technology in digital operations within the RF front-end.... ...
Simultaneously, the advancements in nano-scale CMOS technologies have made transistors smaller and better suited for digital signal processing, with improved high-frequency performance for RF mixed-signal circuits.
These advancements impact wireless RF transceivers creating the need to explore transmitter architectures beyond the level of the most established ones, which are exclusively analog up to date, by pushing them towards incorporating more digital circuitry. Consequently, the primary research question addressed in this is: “What are the potential performance advantages when the strength of (high-speed) digital CMOS is utilized within an RF front-end?”
To answer this research question, this thesis proposes new architectures for digitalintensive transmitter line-ups. These architectures aim to enhance linearity, bandwidth, and power efficiency, and enable the full utilization of CMOS technology in digital operations within the RF front-end....
linearity (OOB IIP3 >20 dBm). ...
linearity (OOB IIP3 >20 dBm).
This thesis reviews recent research on the Doherty power amplifier (DPA) topology and discusses possible power and bandwidth efficiency improvements. In the second part of the thesis, another topology is introduced, which also provides Doherty-like behavior. That topology is called a Pseudo Doherty Load Modulated Balanced Amplifier (PD-LMBA). The performance of PD-LMBA is compared with “conventional” DPAs. Circuit design examples of DPA and PD-LMBA are given. The thesis concludes with a PD-LMBA prototype design, which appears to be very promising in its wideband performance. ...
This thesis reviews recent research on the Doherty power amplifier (DPA) topology and discusses possible power and bandwidth efficiency improvements. In the second part of the thesis, another topology is introduced, which also provides Doherty-like behavior. That topology is called a Pseudo Doherty Load Modulated Balanced Amplifier (PD-LMBA). The performance of PD-LMBA is compared with “conventional” DPAs. Circuit design examples of DPA and PD-LMBA are given. The thesis concludes with a PD-LMBA prototype design, which appears to be very promising in its wideband performance.