The mechanical strength of sintered nanoparticles (NPs) limits their application in advanced electronics packaging. In this study, we explore the anisotropy in the microstructure and mechanical properties of sintered copper (Cu) NPs by combining experimental techniques with molecular dynamics (MD) simulations. We establish a clear relationship between processing conditions, microstructural evolution, and resulting properties in pressure-assisted sintering of Cu NPs. Our findings reveal that pressure-assisted sintering induces significant anisotropy in the microstructure, as evidenced by variations in areal relative density and the orientation distribution of necks formed during sintering. Specifically, along the direction of applied pressure, the microstructure exhibits reduced variation in areal relative density and a higher prevalence of necks with favorable orientations. The resulting anisotropic mechanical properties, with significantly higher strength along the pressure direction compared to other directions, are demonstrated through micro-cantilever bending tests and tensile simulations. This anisotropy is further explained by the combined effects of strain localization (influenced by areal relative density) and the failure modes of necks (determined by their orientation relative to the loading direction). This work provides valuable insights into the analysis of sintered NPs microstructures and offers guidance for optimizing the sintering process.

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The power semiconductor joining technology through sintering of copper nanoparticles is well-suited for die attachment in wide bandgap (WBG) semiconductors, offering high electrical, thermal, and mechanical performances. However, sintered nanocopper will be prone to degradation resulting from corrosion in sulfur-containing corrosive environments such as offshore areas. In this study, experiments, including aging test and corrosion characterization, and simulations based on density functional theory (DFT) studies were conducted to explore the corrosion behavior and mechanism of elemental sulfur (S₈) and hydrogen sulfide (H₂S) on sintered nanocopper. The experimental results indicated that loose corrosion products were observed on the sintered nanocopper during the ageing process involving S₈, and compact layered corrosion products formed during the ageing process involving H₂S. Furthermore, similar corrosion product compositions (Cu₂O, Cu₂S, CuO, CuS, and potentially Cu₂SO₄ or CuSO₄) were observed in both the S₈- and H₂S-ageing processes. However, the S₈-ageing process exhibited more noticeable corrosion penetration. This was explained in simulations results: the unsaturated Cu sites on the oxide layer [Cu₂O(1 1 1)] of the sintered nanocopper could adsorb both H₂S and S₈, while the saturated Cu sites only exhibited the potential to adsorb S₈.

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To fulfill the high-temperature application requirement of high-power electronics packaging, Cu nanoparticle sintering technology, with benefits in low-temperature processing and high-melting point, has attracted considerable attention as a promising candidate for the die-attach interconnect. Comprehensive mechanical characterization of the sintered layer at a microscale is necessary to deepen the understanding of the fracture behavior and improve the reliable design of materials. In this study, microscale cantilevers with different notch depths were fabricated in a 20 MPa sintered interconnect layer. Continuous dynamical fracture testing of the microcantilevers was conducted in situ in a scanning electron microscope to detail the failure characteristic of the porous sintered structure. The microscopic fracture toughness of different notched specimens was obtained from the J-integral in the frame of elastic-plastic fracture mechanics. Specimens with deeper notches presented higher resistance to crack extension, while geometry factors of notch-to-width ratio between 0.20 and 0.37 exhibited a relatively stable microscopic fracture toughness ranging from 3.2 ± 0.3 to 3.6 ± 0.1 MPa m^1/2.

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Nano-metal materials have received considerable attention because of their promising performance in wide bandgap semiconductor packaging. In this study, molecular dynamics (MD) simulation was performed to simulate the nano-Cu sintering mechanism and the subsequent mechanical behaviors. Hybrid sintering, comprising nanosphere (NS) and nanoflake (NF), was performed at temperatures from 500 to 650 K. Furthermore, shear and tensile simulations were conducted with constant strain rates on the sintered structure at multiple temperatures. Subsequently, the extracted mechanical properties were correlated with the sintering behavior. The results revealed that the mechanical properties of the nano-Cu sintered structure could be improved by tuning material composition and increasing the sintering temperature. We established a relationship between the sintered microstructure and mechanical response. The shear modulus and shear strength of the sintered structure with NF particles increased to 41.20 and 3.51 GPa respectively. Furthermore, the elastic modulus increased to 55.60, and the tensile strength increased to 4.88 GPa. This result provides insights into the preparation phase of nano-Cu paste for sintering technology.

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IN advancing the ’More thanMoore’ paradigm, heterogeneous integration has emerged to facilitate the creation of highly efficient, compact, and multi-functional semiconductor systems. Addressing the challenges related to power efficiency, superior performance, and integration density, low-temperature nanoparticle sintering technology has become pivotal for integrating diverse materials and components in advanced semiconductor packaging. Traditional electronic packaging materials face limitations and process complexity, making low-temperature nanoparticle sintering an attractive option. With its benefits of low processing temperatures (< 0.4 Tm), exceptional electro-thermomechanical performance, and high process flexibility, this technology is gaining increasing attention, particularly in high-power electronics packaging applications. Over the past decade, silver (Ag) sintering technology has shown promise in the power electronics industry, serving as an effective solution for high-power die-attach. However, due to the high cost of materials, efforts have been directed towards pressure reduction and exploring alternative sinter materials to reduce overall process costs. In recent years, the concept of ’all copper (Cu) interconnect’ has transcended fromlow-power to high-power applications, with low-temperature Cu nanoparticle sintering showing substantial potential as a replacement for Ag in pressure-assisted sintering. Despite this promising avenue, the understanding of sintered Cu materials remains limited, primarily due to susceptibility to oxidation issues. Comprehensive studies comparing both sinter materials, extending beyond mere shear tests, are insufficient, leaving a significant gap in our understanding. Furthermore, methodologies for characterizing the sintered structure and providing detailed insights into its thermo-mechanical behavior are notably absent. In this dissertation, molecular dynamics (MD) simulation was employed at first to study the nanoparticles’ coalescence kinetics and mechanical and chemical performance of coalesced nanoparticles. A two-hemispherical nanoparticle model was built to simulate the impact of sintering temperature and pressure on low-temperature pressureassisted coalescence. The sintering dynamics and microstructure evolution were analyzed, including neck growth, shrinkage variation, grain boundary development, and dislocation activities. Furthermore, on the basics of pressure-assisted sintered nanoparticles, uniaxial tensile tests with a constant strain rate were employed to investigate its tensile performance. Subsequently, another mechanical nanoindentation simulation was implemented in a multi-nanoparticle sintered structure. The impact of indentation position and indenter size on the nanoindentation response was investigated. At the end of the first chapter, the chemical corrosion of sulphidation on multi-Ag nanoparticles’ sintered structure was simulated by the reactive-force-field (ReaxFF) MD method. The sulphidation on the dense Ag and porous sintered structures was compared and analyzed. Moreover, the sulphidation mechanism was revealed at an atomic level...@en

Driven by the increasing demand for high-power systems, ceramic substrates have received more attention for handling higher power density. Warpage in active metal brazed (AMB) ceramic substrate becomes a critical issue as it can deteriorate the reliability performance. This study comprises three phases, including investigation of the cause of the warpage, validation of the proposed model, and optimization for effective warpage management. At first, the coefficient of thermal expansion (CTE) and yield strength of the copper (Cu) layer in AMB were characterized and adopted in a two-dimensional (2D) finite element model. The evolution of simulated strain and moments revealed the cause of the warpage during the manufacturing processes. Furthermore, the 2D model was extended to a three-dimensional (3D) model. The finite element method (FEM) and experiments were conducted on different heat treatment conditions for 3D model validation. The validated 3D model was applied to carry out a design of experiments (DoEs) for design optimization to reduce the warpage. Consequently, the factor analysis in DoEs was demonstrated by different pattern designs using subtractive milling techniques.@en

Sintered nanocopper (nanoCu) paste, exhibiting excellent electrical, thermal, and mechanical performances, offers promise for interconnections in wide bandgap (WBG) semiconductors operating at higher temperatures. However, sintered nanoCu is prone to severe corrosion in environments containing H2S, with on-site characterization methods for the composition of corrosion products currently lacking. In this study, a novel method was proposed for the rapid characterization of corrosion products during the corrosion process based on hyperspectral imaging (HSI) technology. Sintered nanoCu samples were subjected to 336 h H2S gas corrosion tests with bulk Cu as the reference, followed by correlating the corrosion element content with hyperspectral characteristic parameters. Then, the morphology and composition of corrosion products were researched using focused ion beam scanning electron microscope (FIB-SEM) and transmission electron microscope (TEM) analysis. The results showed that (1) during the corrosion process, a linear relationship was established between the Cu, O elemental atomic contents on the sample surfaces and their hyperspectral characteristic parameters. (2) The elemental atomic content of S exhibited an exponential relationship with the characteristic parameter. (3) The change rate in the spectral characteristic parameters during the corrosion process reflected the severity of corrosion, which was confirmed by comparing the thickness of the corrosion products of the sintered nanoCu and bulk Cu. This study offers a foundation for the further investigation of rapid on-site characterization of sintered nanoCu corrosion involving H2S.@en

During operation in environments containing hydrogen sulfide (H₂S), such as in offshore and coastal environments, sintered nanoCu in power electronics is susceptible to degradation caused by corrosion. In this study, experimental and molecular dynamics (MD) simulation analyses were conducted to investigate the evolution and mechanism of H₂S-induced corrosion of sintered nanoCu, and bulk Cu was used as the reference. The following results are obtained: (1) Both sintered nanoCu and bulk Cu reacted with O₂ prior to reacting with H₂S, forming Cu₂O, Cu₂S, CuO, and CuS. In addition, sintered nanoCu exhibited more severe corrosion. (2) For both sintered nanoCu and bulk Cu, H₂S-induced corrosion resulted in the deterioration of electrical, thermal, and mechanical properties, and sintered nanoCu experienced a greater extent of deterioration. (3) As was ascertained through Reactive Force Field (ReaxFF) MD simulations, the penetration of H₂S and O₂ combined with the upward migration of Cu resulted in the formation of a corrosion film. In addition, compared to bulk Cu, the H₂S and O₂ penetration in the sintered nanoCu structure was observed to occur to a greater depth, accounting for the more pronounced performance degradation.

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The authors regret that in the above article the Fig. 3 contains an error of cross-section image of group C at 48 h on Page 4. Fig. 3 should read: This correction does not influence the method, results and conclusions of the original article. The authors would like to apologise for any inconvenience caused.

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The nano-copper particles are widely used in the sintering processes of packaging wide bandgap semiconductors. Despite the significant success in the industry, the mechanism bridging the sintering process to the mechanical properties of sintered nano-copper is not yet well-modeled. In this paper, the impacts of different sintering temperatures and initial porosities caused by different stacking patterns on the uniaxial tensile performance of the sintered layer were studied via a molecular dynamics approach. Two stacking patterns, simple cubic and face-centered cubic, were simulated, respectively. Evolution of their structure at temperatures of 300, 400, 500, and 600 K were simulated as the sintering process. Afterward, the sintered structures were subjected to uniaxial tensile with rates of 0.01 and 0.04 Å/ps at different temperatures to compare the mechanical properties. The results show that the sintering rate and density of the sintered structure increase with a higher temperature. However, the tensile strength of the sintered structure is less relevant to the difference in stacking pattern. This study proves that porosity has a greater effect on sintering quality.@en

The rapid development of power electronics has challenged the thermal integrity of semiconductor packaging. Further developments in this domain can be supported significantly by utilizing fast and flexible thermal characteristic evaluation. This study employs the transient dual interface method (TDIM) to characterize and compare the thermal resistance of Ag- and Cu-sintered die-attach joints using an in-house developed thermal test chip (TTC). The proposed TTC with 82.5% active area achieves a temperature sensitivity of 12 Ω/K and maximum power of 360 W per cell, which are 50% and 44% higher than the state-of-the-art, respectively. The uniformity of the temperature distribution (1 °C at 68 W) is verified by infrared thermography. The cost-effective manufacturing process allows the design to be applied to any substrate, such as SiC or GaN. Ag and Cu sintering is performed to bond the TTC on a Cu substrate, and the junction-to-case thermal resistance of the sintered structures is extracted. The lowest junction-to-case thermal resistance of 0.144 K/W is measured for the device sintered using Ag paste. Meanwhile, the Cu sintered structure exhibits a comparable value of 0.158 K/W. The proposed TTC in combination with TDIM accelerates the introduction of novel and cost-effective materials such as Cu.@en

As a promising technology for high-power and high-temperature power electronics packaging, nanocopper (nanoCu) paste sintering has recently received increasing attention as a die-attachment. The high-temperature deformation of sintered nanoCu paste and its underlying mechanisms challenge the reliability of high-power electronics packaging. In this study, the tensile deformation behaviors of sintered nanoCu paste were firstly characterized by high-temperature tensile tests performed at various temperatures and strain rates ranging from 180 °C to 360 °C, 1 × 10⁻⁴ s⁻¹ to 1 × 10⁻³ s⁻¹ respectively. It was found that the elastic modulus and tensile strength decreased at the higher tensile temperature while the ductility increased accordingly. The highest elastic modulus and tensile strength results were 12.15 GPa and 46.97 MPa, respectively. Second, failure analysis was conducted based on the fracture surface after tensile testing. Recrystallization was revealed as the main factor for ductility improvement. Subsequently, an Anand model was fitted by stress-strain curves to describe the tensile constitutive behavior of the sintered nanoCu paste. Multi-scale modelling techniques also investigated the impact of tensile temperature and strain rate on the tensile response. Molecular dynamics simulation was implemented using a hemispherical Cu nanoparticle model to reveal the properties from an atomistic perspective. In addition, a two-dimensional equivalent model was further established by using a stochastically distributed void morphology. The multi-scale modelling techniques successfully describe the evolution of tensile response to the different tensile temperatures and strain rates. Besides, the equivalent model with random void morphology was demonstrated as the finite element simulation results were highly consistent with the high-temperature tensile experiments.

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Nano-metal materials sintering has received increasing attention in recent years for its promising performance in the wide bandgap semiconductor packaging. In this paper, molecular dynamics (MD) simulation method were applied to simulate the nano-Cu sintering mechanism and the subsequent mechanical behavior. Hybrid sintering, comprising nanosphere (NS) and nanoflake (NF), was carried out at temperatures ranging from 500K to 650K. Furthermore, shearing simulations were conducted with constant strain rates on the sintered structure at multiple temperatures, and subsequently correlated the extracted mechanical properties with the sintering behavior. The results indicated that the mechanical properties of nano-Cu sintered structure were improved by tuning material composition and increasing the sintering temperature. We established a relationship between the sintered microstructure and mechanical response, the shear modulus and shear strength of the sintered structure with NF particles increased to 41.2GPa and 3.51GPa respectively. It offers valuable insights into the preparation phase of nano Cu paste for sintering technology.@en

As a critical part of speeding up industrial electrification, power electronics, and its packaging technology are undergoing rapid development. Cu nanoparticle sintering technology has therefore received extensive attention for its excellent performance in the die-attachment layer, where the mechanical properties are essential to be known for design for reliability. Both sintering and subsequent nanoindentation were studied by simulation. The effect of porosity on the nanoindentation response was investigated by setting different initial packing densities. In addition, the impact of indenter size and indentation positions on the nanoindentation response were discussed. The nanoindentation behaviors were studied by extracting loading-displacement (P-h) curves and calculating elastic modulus and hardness. In addition, the microstructure evolution was adopted using atomic configuration to study the nanoindentation mechanism. This work offers valuable insights into the Cu sinter paste preparation phase for sintering technology.@en

The application of microporous sintered copper (Cu) as a bonding material to replace conventional die-attach materials in power electronic devices has attracted considerable interest. Many previous studies have focused on the effect of processing parameters (temperature, time, pressure) on the microstructure evolution of sintered Cu. However, there are only a few studies with regard to the mechanical properties of sintered Cu. As the die-attach layer undergoes thermal and mechanical stress during its application, it is essential to investigate the micro-scale mechanical properties of sintered Cu. Fracture toughness is a measure of the resistance of a material to crack propagation under predominantly linear-elastic conditions, which is an essential parameter for predicting fracture failure. As cracks and defects are difficult to avoid during fabrication and application processing for sintered Cu, which will definitely cause a significant effect on micromechanical properties. Thus, it is essential to reveal the effect of microstructure on fracture toughess of sintered Cu nanoparticles.@en

Driving by the increased demand for hermetic packaging in the more than Moore (MtM) roadmap, a Cu nanoparticle sintering-enabled hermetic sealing solution was developed with a small-size sealing ring. The developed technology simplifies microfabrication and requires less surface roughness using a sinterable Cu nanoparticle paste. A 50μm size Cu paste sealing ring was achieved using a lithography patterned photoresist as a stencil mask. A groove-structured chip was used to amplify localized stress. The Cu nanoparticle paste was fully sintered at 300 °C under pressure ranging from 10 to 40 MPa resulting in a robust bonding with a maximum shear strength of 280 MPa and implementing hermetic packaging. The deflection of the Si diaphragms estimated a vacuum level of 7 kPa. Vacuum sealing was maintained for over six months, and the lowest leak rate was calculated as 8.4× 10 ^-13Pa·m ³/s. The developed technology that comprises small-size patterning and pressure-assisted sintering offers the potential for a simple, cost-effective, but robust solution for hermetic packaging.

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Understanding the atomic diffusion features in metallic material is significant to explain the diffusion-controlled physical processes. In this paper, using electromigration experiments and molecular dynamic (MD) simulations, we investigate the effects of grain size and temperature on the self-diffusion of polycrystalline aluminium (Al). The mass transport due to electromigration are accelerated by increasing temperature and decreasing grain size. Magnitudes of effective diffusivity (Deff) and grain boundary diffusivity (DGBs) are experimentally determined, in which theDeffchanges as a function of grain size and temperature, butDGBsis independent of the grain size, only affected by the temperature. Moreover, MD simulations of atomic diffusion in polycrystalline Al demonstrate those observations from experiments. Based on MD results, the Arrhenius equation ofDGBsand empirical formula of the thickness of grain boundaries at various temperatures are obtained. In total,DeffandDGBsobtained in the present study agree with literature results, and a comprehensive result of diffusivities related to the grain size is presented.

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Nano-copper sintering is one of new die-attachment and interconnection solutions to realize the wide bandgap semiconductor power electronics packaging with benefits on high temperature, low inductance, low thermal resistance and low cost. Aiming to assess the high-temperature reliability of sintered nano-copper die-attachment and interconnection, this study characterized the mechanical properties of sintered nano-copper particles using the high-temperature nanoindentation tests. The results showed that: firstly, the hardness and indentation modulus of the sintered nano-copper particles increased rapidly when the loading rate increased below 0.2 mN·s⁻¹ and then stabilized, and decreased with increased applied load up to 30 mN. Next, by extracting the yield stress and strain hardening index, a plastic stress–strain constitutive model at room temperature for sintered nano-copper particles was obtained. Finally, the high temperature nanoindentation tests were performed at 140 ˚C–200 ˚C on the sintered nano-copper particles prepared under different assisted pressures, which showed that a high assisted pressure resulted in the reduced temperature sensitivity of hardness and indentation modulus. The creep tests indicated that high operation temperature resulted in a high steady-state creep rate, which negatively impacted the creep resistance of sintered nano-copper particles, while the higher assisted pressure could improve the creep resistance.

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Advances in semiconductor device manufacturing technologies are enabled by the development and application of novel materials. Especially one class of materials, nanoporous films, became building blocks for a broad range of applications, such as gas sensors and interconnects. Therefore, a versatile fabrication technology is needed to integrate these films and meet the trend towards device miniaturization and high integration density. In this study, we developed a novel method to pattern nanoporous thin films with high flexibility in material selection. Herein, Au and ZnO nanoparticles were synthesized by spark ablation and printed on a Ti/TiO2 adhesion layer, which was exposed by a lithographic stencil mask. Subsequently, the photoresist was stripped by a cost-efficient lift-off process. Nanoporous patterned features were thus obtained and the finest feature has a gap width of 0.6 μ fm and a line width of 2 μ fm. Using SEM and profilometers to investigate the structure of the films, it was demonstrated that the lift-off process had a minor impact on the microstructure and thickness. The samples presented a rough surface and high porosity, indicating a large surface-to-volume ratio. This is supported by the measured conductivity of Au nanoporous film, which is 12% of the value for bulk Au. As lithographic stencil printing is compatible with conventional lithographic pattering, this method enables further application on mass production of various nanoporous film-based devices in the future.

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To meet the requirements of low temperature packaging and high temperature operation for wide bandgap semiconductors, the traditional reflow soldering is gradually substituted by the metallic nanoparticle sintering interconnection. However, the high sintering densification is one of necessities to achieve the high reliable packaging. To reveal the mechanism of nano-copper particles sintering interconnection, this paper firstly establishes the relationship between the particle size ratio and the stacking porosity through the three-dimensional (3D) non-isodiametric double sphere stacking modeling. Then, the Monte Carlo simulation is performed to investigate the sintering process of nano-copper particles with different size ratios. Finally, a sintering experiment with the mixture of two types of nano-copper particles is used to validate the proposed models and simulations. The results show that, according to three 3D stacking models, the stacking porosity is lowest when the particle size ratio is between 10:1 and 5:1. Through the Monte Carlo simulation, the model with a particle size ratio of 5:1 has the largest sintering shrinkage. The experiment by mixing the 250 nm and 50 nm nano-copper particle shows the highest relative density of sintered samples when the particle mass ratio is 8:1, which is consistent with the theoretical calculations. Thus, the proposed method in this study can provide theoretical supports to the nano-copper sintering interconnection application and process optimization in the wide bandgap semiconductor packaging.

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