Single-grain Si thin film transistors SPICE model, analog and RF circuit applications

SPICE modeling of single-grain Si TFTs using TFTs BSIMSOI

Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100C

SPICE modeling of single-grain Si TFTs using BSIMSOI

Location and Orientation Control of Si Grains Through Combined MILC and ¿-Czochralski process

Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy

DC modeling of Single-Grain Si TFTs using BSIMSOI

Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy

Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the mu-Czochralski (grain filter) process

Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

Orientation and Location Controlled Si Grains Through Combined MILC and µ-Czochralski Process

Ingle-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer

<100>textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

Effects of capping layer on grain growth with ¿-Czochralski process during excimer laser crystallization

Automated digital circuits design based on single-grain si TFTs fabricated through u-Czochralski (grain filter) process

Preferred Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation

Preparation of large, location-controlled Si grains by excimer laser crystallization of ¿-Si film sputtered at 100 °C