Single-grain Si thin film transistors SPICE model, analog and RF circuit applications

SPICE modeling of single-grain Si TFTs using TFTs BSIMSOI

Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100C

Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy

Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the mu-Czochralski (grain filter) process

Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

DC modeling of Single-Grain Si TFTs using BSIMSOI

Ingle-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

Orientation and Location Controlled Si Grains Through Combined MILC and µ-Czochralski Process

High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer

Location and Orientation Control of Si Grains Through Combined MILC and ¿-Czochralski process

SPICE modeling of single-grain Si TFTs using BSIMSOI

Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy

Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

Capping layer on thin Si film for ¿-Czochralski process with excimer laser crystallization

A novel Selected Area Laser Assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane

Hot-carrier degradation analysis based on ring oscillators

Effects of capping layer on grain growth with ¿-Czochralski process during excimer laser crystallization

Defect states in excimer-laser crystallized single-grain TFTs studied with isothermal charge deep-level transient spectroscopy