JF

82 records found

The mechanical strength of sintered nanoparticles (NPs) limits their application in advanced electronics packaging. In this study, we explore the anisotropy in the microstructure and mechanical properties of sintered copper (Cu) NPs by combining experimental techniques with molec ...
Van der Waals heterojunctions (vdWHs) have garnered significant attention for their promising applications in optoelectronics, attributed to their exceptional physical attributes. In this study, we present a straightforward approach to fabricating high-performance vdWHs photodete ...
This study demonstrates a breakdown analysis of the dynamics of a liquid crystal elastomer (LCE) including quality check, geometric measurement, thermal characterization, and comparison of heat- and light-induced contractions. A blue light-responsive acrylate side chain LCE with ...
During operation in environments containing hydrogen sulfide (H2S), such as in offshore and coastal environments, sintered nanoCu in power electronics is susceptible to degradation caused by corrosion. In this study, experimental and molecular dynamics (MD) simulation ...
To fulfill the high-temperature application requirement of high-power electronics packaging, Cu nanoparticle sintering technology, with benefits in low-temperature processing and high-melting point, has attracted considerable attention as a promising candidate for the die-attach ...
Corrosion protection is one of the most important issues when copper is applied in power electronics packaging as bonding wire, die attachment, interconnection, and DBC substrate. Covering a layer of corrosion-resistant encapsulation material is a worthy consideration to protect ...
Electromigration (EM) is a crucial failure mode in Aluminum (Al) interconnection wires those are widely used in high density semiconductor packaging. This study systematically investigated the influence of EM on the mechanical properties of Al interconnects via nanoindentation ex ...
Silicon carbide (SiC) MOSFETs, as leading wide bandgap semiconductor devices, exhibit superior stability and reliability under high-temperature, high-switching frequencies, and high-power density operational conditions. SiC MOSFET with fan-out panel-level packaging (FOPLP) utiliz ...
High-power white light-emitting diodes (LEDs) have demonstrated superior efficiency and reliability compared to traditional white light sources. However, ensuring maximum performance for a prolonged lifetime use presents a significant challenge for manufacturers and end users, es ...
The nano-copper particles are widely used in the sintering processes of packaging wide bandgap semiconductors. Despite the significant success in the industry, the mechanism bridging the sintering process to the mechanical properties of sintered nano-copper is not yet well-modele ...
MAlSiN3:Eu2+ (M = Ca, Sr) is commonly used in high-power phosphor-converted white-light-emitting diodes and laser diodes to promote their color-rendering index. However, the wide application of this phosphor is limited by the degradation of its luminescent p ...
This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a machine-learning model. An ...
Tungsten disulfide (WS2) has recently attracted considerable attention owing to its excellent physical, chemical, electronic, and optical properties, leading to increased research into its applications in electronic and optoelectronic devices. However, the oxidation of 2D materia ...
The power semiconductor joining technology through sintering of copper nanoparticles is well-suited for die attachment in wide bandgap (WBG) semiconductors, offering high electrical, thermal, and mechanical performances. However, sintered nanocopper will be prone to degradation r ...
4H-SiC is widely used in power electronics owing to its superior physical properties. However, temperature-induced stresses compromise the reliability of 4H-SiC power devices in high-temperature applications, warranting precise, and nondestructive stress characterization responsi ...
In the domain of power electronics, especially for applications requiring high power, high temperature, and high frequency, Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors (SiC MOSFETs) stand out due to their excellent properties such as high thermal conductivi ...

Corrigendum to “Insights into the high-sulphur aging of sintered silver nanoparticles

An experimental and ReaxFF study” [Corros. Sci. 192 (2021) 109846] (Corrosion Science (2021) 192, (S0010938X21006120), (10.1016/j.corsci.2021.109846))

The authors regret that in the above article the Fig. 3 contains an error of cross-section image of group C at 48 h on Page 4. Fig. 3 should read: This correction does not influence the method, results and conclusions of the original article. The authors would like to apologise f ...
Driven by the increasing demand for high-power systems, ceramic substrates have received more attention for handling higher power density. Warpage in active metal brazed (AMB) ceramic substrate becomes a critical issue as it can deteriorate the reliability performance. This study ...
Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of SiC devices in high temperatures, die-attach materials that can withstand high temperatures f ...
Sintered nanocopper (nanoCu) paste, exhibiting excellent electrical, thermal, and mechanical performances, offers promise for interconnections in wide bandgap (WBG) semiconductors operating at higher temperatures. However, sintered nanoCu is prone to severe corrosion in environme ...