Improved RSOL planar calibration via EM modelling and reduced spread resistive layers

SiGe heterojunction bipolar transistors with Schottky collector contacts

Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

Simple method to evaluate minority carrier injection levels in schottky diodes

Pure boron chemical vapor deposited layers; A new material for silicon device processing

Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing

Deep p+ junctions formed by drive-in from pure boron depositions

Chemical Vapor Deposition of Gallium on Silicon and SiO2

Analytical Carrier Transport Model for Arbitrarily Shallow p-n Junctions

Application of amorphous boron layer as diffusion barrier for pure aluminium

Reduction of alloying temperature of metallization stacks containing Al/Ti/TiN from 400 to 300°C

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology

Analytical carrier transport model for arbitrary shallow p-n junctions

SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

RF/microwave device fabrication in silicon-on-glass technology

Evaluation of al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Special RF/microwave devices in silicon-on-glass technology

Silicon-on-glass technology for RF and microwave device fabrication

Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors