Silicon-based technology for integrated waveguides and mm-wave systems

Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna

Silicon-filled rectangular waveguides and frequency scanning antennas for mm-wave integrated systems

Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling

Integration of MOSFETs with SiGe dots as stressor material

Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Ultra-high aspect ratio FinFet technology

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Al mediated solid phase epitaxy of silicon on insulator

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Analysis of subthreshold conduction in short channel recessed source/drain UTB SOI MOSFETs

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Suppression of corner effects in wide channel triple gate bulk finfets

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS